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Title Liquid phase epitaxy of electronic, optical, and optoelectronic materials / edited by Peter Capper, Michael Mauk
Published Chichester, England ; Hoboken, NJ : Wiley, [2007]
©2007
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Description 1 online resource (xxii, 441 pages) : illustrations
Series Wiley series in materials for electronic and optoelectronic applications
Wiley series in materials for electronic and optoelectronic applications.
Contents Liquid Phase Epitaxy of Electronic, Optical and Optoelectronic Materials; Contents; Series Preface; Preface; Acknowledgements; List of Contributors; 1 Introduction to Liquid Phase Epitaxy; 2 Liquid Phase Epitaxy in Russia Prior to 1990; 3 Phase Diagrams and Modeling in Liquid Phase Epitaxy; 4 Equipment and Instrumentation for Liquid Phase Epitaxy; 5 Silicon, Germanium and Silicon-Germanium Liquid Phase Epitaxy; 6 Liquid Phase Epitaxy of Silicon Carbide; 7 Liquid Phase Epitaxy of Gallium Nitride; 8 Liquid Phase Epitaxy of Quantum Wells and Quantum Dots
Summary Liquid-Phase Epitaxy (LPE) is a technique used in the bulk growth of crystals, typically in semiconductor manufacturing, whereby the crystal is grown from a rich solution of the semiconductor onto a substrate in layers, each of which is formed by supersaturation or cooling. At least 50% of growth in the optoelectronics area is currently focussed on LPE. This book covers the bulk growth of semiconductors, i.e. silicon, gallium arsenide, cadmium mercury telluride, indium phosphide, indium antimonide, gallium nitride, cadmium zinc telluride, a range of wide-bandgap II-VI compounds, diamond and si
Bibliography Includes bibliographical references and index
Notes Print version record
Subject Crystal growth.
Electronics -- Materials.
Liquid phase epitaxy.
Optical materials.
Optoelectronic devices -- Materials.
Semiconductors.
Form Electronic book
Author Capper, Peter.
Mauk, Michael.
Wiley InterScience (Online service)
ISBN 0470319496 (electronic bk.)
047031950X
1281032204
9780470319499 (electronic bk.)
9780470319505
9781281032201
(cloth)
(cloth)