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Title Technology of gallium nitride crystal growth / Dirk Ehrentraut, Elke Meissner, Michal Bockowski, editors
Published Berlin ; Heidelberg ; New York : Springer-Verlag, [2010]
©2010
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Description 1 online resource (xxi, 326 pages) : illustrations (some color)
Series Springer series in materials science, 0933-033X ; 133
Springer series in materials science ; 133
Contents Cover13; -- Technology of Gallium Nitride Crystal Growth13; -- Foreword13; -- Preface Editors13; -- Contents13; -- Contributors13; -- Part I Market for Bulk GaN Crystals -- 1 Development of the Bulk GaN Substrate Market -- 1.1 Introduction -- 1.2 III-N Device Market Drivers and Forecast -- 1.3 Benefits and Importance of Bulk GaN Substrates -- 1.4 GaN Device Trends for Bulk GaN Substrates -- 1.5 Bulk GaN Substrate Trends -- 1.6 Summary -- References -- Part II Vapor Phase Growth Technology -- 2 Hydride Vapor Phase Epitaxy of GaN -- 2.1 Introduction -- 2.2 Thermodynamic Analysis on HVPE Growth of GaN -- 2.3 Cubic GaN Epitaxial Growth on (100) GaAs Substrate -- 2.4 Comparison of GaN Growth on (111)A and (111)B GaAs Substrates -- 2.5 Ab Initio Calculations of GaN Initial Growth Processes on (111)A and (111)B GaAs Surfaces -- 2.6 Thick GaN Growth on (111)A GaAs Substrate -- 2.7 Preparation of Fe-Doped Semi-insulating GaN Substrates -- References -- 3 Growth of Bulk GaN Crystals by HVPE on SingleCrystalline GaN Seeds -- 3.1 Introduction -- 3.2 Experimental -- 3.3 Experimental Results -- 3.4 Conclusions -- References -- 4 Freestanding GaN Wafers by Hydride Vapor Phase Epitaxy Using Void-Assisted Separation Technology -- 4.1 Introduction -- 4.2 Outline of the HVPE-VAS Technology -- 4.3 Preparation of a GaN Template with a Porous TiN Film -- 4.4 HVPE Growth on GaN Templates with a Porous TiN Film -- 4.5 Properties of GaN Wafers Fabricated by HVPE8211;VAS Technology -- 4.6 Summary -- References -- 5 Nonpolar and Semipolar GaN Growth by HVPE -- 5.1 Introduction -- 5.2 Heteroepitaxial Films, Including Substrate Selection -- 5.3 Lateral Epitaxial Overgrowth of Nonpolar, Semipolar GaN -- 5.4 Conclusions and Future Development -- References -- 6 High Growth Rate MOVPE -- 6.1 Introduction -- 6.2 Growth Characteristics of AlGaN and GaNby Conventional MOVPE -- 6.3 Quantum Chemical Study of Vapor-Phase Reaction -- 6.4 Result of High-Growth-Rate GaN by Usinga High-Flow-speed Reactor -- 6.5 Discussion and Summary -- References -- Part III Solution Growth Technology -- 7 Ammonothermal Growth of GaN UnderAmmono-Basic Conditions -- 7.1 Introduction -- 7.2 The Growth Method -- 7.3 Crystal Characterization -- 7.4 Homoepitaxy on Ammonothermal GaN -- 7.5 Conclusions -- References -- 8 A Pathway Toward Bulk Growth of GaNby the Ammonothermal Method -- 8.1 Introduction -- 8.2 Impact of Mineralizer on AmmonothermalSynthesis of GaN -- 8.3 Solubility of GaN in Ammonobasic Solutions -- 8.4 Seeded Growth of GaN with Metallic Ga Nutrient -- 8.5 Seeded Growth of GaN with Polycrystalline GaN Nutrient -- 8.6 Growth of Bulk GaN Crystals and Sliced Wafers -- 8.7 Summary -- References -- 9 Acidic Ammonothermal Growth Technology for GaN -- 9.1 Introduction -- 9.2 Brief History of the Ammonothermal GrowthTechnique of GaN -- 9.3 Growth Technology -- 9.4 Chemistry of the Solution and Growth Mechanism -- 9.5 Properties of Ammonothermal GaN -- 9.6 Prospects and Future developmentsfor Ammonothermal GaN -- References -- Part IV Flux Growth Technology -- 10 High Pressure Solution Growth of Gallium Nitride -- 10.1 Introduction -- 10.2 Growth Method -- 10.3 Spontaneous Crystallization by HPS Growth Method -- 10.4 Seeded Growth by HPS Method -- 10.5 Applications of Pressure Grown GaN Substrates: Blue Las
Summary This book deals with the important technological aspects of the growth of GaN single crystals by HVPE, MOCVD, ammonothermal and flux methods for the purpose of free-standing GaN wafer production. Leading experts from industry and academia report in a very comprehensive way on the current state-of-the-art of the growth technologies and optical and structural properties of the GaN crystals are compared. --Book Jacket
Bibliography Includes bibliographical references and index
Notes Print version record
Subject Gallium nitride.
Crystal growth.
Semiconductors.
Form Electronic book
Author Ehrentraut, Dirk.
Meissner, Elke.
Bockowski, Michal.
ISBN 9783642048302 (ebk.)
3642048307 (ebk.)
9783642048289
3642048285