| Description |
1 online resource (304 p.) |
| Contents |
Cover -- Title Page -- Copyright Page -- Contents -- List of Contributors -- Preface -- Acknowledgements -- Chapter 1 Growth of Nano-Wire Field Effect Transistor in 21st Century -- 1.1 Introduction -- 1.2 Initial Works on Nanowire Field-Effect-Transistors (NW-FET) -- 1.2(A) Theoretical and Simulation Studies on Nanowire FET (NW-FET) -- 1.2(B) Fabrication of Nanowire Field-Effect-Transistor (NW-FET) -- 1.3 Application of Nanowire Field-Effect-Transistors (NW-FET) -- 1.4 Conclusion -- References -- Chapter 2 Impact of Silicon Nanowire-Based Transistor in IC Design Perspective |
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2.1 Introduction -- 2.2 Nanoscale Devices -- 2.2.1 Carbon Nanostructures -- 2.2.2 Nanoelectromechanical Systems -- 2.2.3 Graphene-Based Transistors -- 2.2.4 Silicon Nanowire Based Devices -- 2.3 Nanowire Heterostructures and Silicon Nanowires -- 2.3.1 Characteristics of SiNWs -- 2.3.2 Fabrication -- 2.3.3 Applications of SiNWs -- 2.4 Performance Analysis of Si Nanowire with SOI FET -- 2.5 Conclusion -- References -- Chapter 3 Kink Effect in Field Effect Transistors: Different Models and Techniques -- 3.1 Introduction -- 3.2 Techniques of Kink Effect -- 3.2.1 Current-Voltage Technique |
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3.2.2 Pulsed I-V Technique -- 3.2.3 Capacitance-Voltage Technique -- 3.3 Different Models of Kink Effect -- 3.4 Kink Effect in MOS Capacitors -- 3.4.1 Incomplete Ionization Model -- 3.4.2 Simulation of the Kink Effect in MOS Capacitor -- 3.4.2.1 Effect of the Variation of Activation Energy -- 3.4.2.2 Effect of the Variation of Traps Density -- 3.4.2.3 Effect of the Variation of Capture Cross Section -- 3.4.3 Comparison Between Experimental and Simulation Results -- 3.4.3.1 Hysteresis Effect on the C-V Characteristics -- 3.4.3.2 Proof of the Origin of Kink Effect -- 3.5 Conclusion -- References |
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Chapter 4 Next Generation Molybdenum Disulfide FET: Its Properties, Evaluation, and Its Applications -- 4.1 Introduction of Two-Dimensional Materials -- 4.2 Evaluation of 2D-Materials -- 4.3 Overview of MoS2 -- 4.3.1 Why MoS2 -- 4.3.2 MoS2 Structured Design -- 4.4 Properties of MoS2 -- 4.4.1 Bulk Characteristics -- 4.4.2 Electrical and Optical Characteristics -- 4.4.2.1 BandGap -- 4.4.2.2 Photoluminescence Spectra -- 4.4.2.3 Injection of Electrons -- 4.4.2.4 Transistor -- 4.4.3 Mechanical Properties -- 4.4.3.1 Valleytronics -- 4.4.3.2 Optical Transitions -- 4.4.3.3 Spin-Orbit Valence Band |
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4.5 Fabrication of MoS2 -- 4.5.1 Mechanical Exfoliation -- 4.5.2 Intercalation -- 4.5.3 Solvent Exfoliation -- 4.5.4 Chemical Vapor Deposition (CVD) -- 4.6 Applications of MoS2 -- 4.6.1 Solid Lubricants -- 4.6.2 Electronic Applications -- 4.6.3 Field-Effect Transistor -- 4.6.4 Switching Transistor -- 4.6.5 Nano-Structures -- 4.6.6 Biosensors -- 4.6.7 FET-Based Biosensors -- 4.7 Comparison of Other 2D Materials with MoS2 -- 4.8 Conclusion -- References -- Chapter 5 Impact of Working Temperature on the ION/IOFF Ratio of a Hetero Step-Shaped Gate TFET With Improved Ambipolar Conduction |
| Notes |
Description based upon print version of record |
|
5.1 Introduction |
| Form |
Electronic book
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| Author |
Kumar, Abhishek
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Rao, K. Srinivasa
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Mudimela, Prasantha R
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| ISBN |
9781394186389 |
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139418638X |
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1394186398 |
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9781394186396 |
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