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Book Cover
Author Galup-Montoro, Carlos.

Title MOSFET modeling for circuit analysis and design / Carlos Galup-Montoro, Márcio Cherem Schneider
Published Singapore ; Hackensack, NJ : World Scientific, [2007]
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Description 1 online resource (xxiv, 418 pages) : illustrations
Series International series on advances in solid state electronics and technology
International series on advances in solid state electronics and technology.
Contents Foreword; Preface; Contents; List of Selected Symbols; Chapter 1 Introduction; Chapter 2 The MOS Capacitor; Chapter 3 The Long-Channel MOSFET: Theory and dc Equations; Chapter 4 The Real MOS Transistor: dc Models; Chapter 5 Stored Charges and Capacitive Coefficients; Chapter 6 Mismatch Modeling; Chapter 7 Noise in MOSFETs; Chapter 8 High-Frequency Models; Chapter 9 Gate and Bulk Currents; Chapter 10 Advanced MOSFET Structures; Chapter 11 MOSFET Parameter Extraction; Chapter 12 Advanced MOSFET Models for Circuit Simulators; Appendix A Electrostatics in One Dimension
Summary This is the first book dedicated to the next generation of MOSFET models. Addressed to circuit designers with an in-depth treatment that appeals to device specialists, the book presents a fresh view of compact modeling, having completely abandoned the regional modeling approach. Both an overview of the basic physics theory required to build compact MOSFET models and a unified treatment of inversion-charge and surface-potential models are provided. The needs of digital, analog and RF designers as regards the availability of simple equations for circuit designs are taken into account. Compact ex
Bibliography Includes bibliographical references and index
Notes Print version record
Subject Field-effect transistors -- Mathematical models.
Metal oxide semiconductor field-effect transistors -- Mathematical models.
Form Electronic book
Author Schneider, Márcio Cherem.
ISBN 9789812707598 (electronic bk.)
981270759X (electronic bk.)