| Description |
1 online resource (373 pages) |
| Contents |
Cover; Half Title; Title Page; Copyright Page; Dedication; Contents; Preface to the Second Edition; Preface to the First Edition; Authors; Abbreviations; List of Elements by Symbol; Chapter 1: Semiconductor Basics; 1.1 Historical Overview; 1.2 Cubic Crystals; 1.3 Other Crystals; 1.4 Phonons and the Brillouin Zone; 1.5 The Band Gap; 1.6 Band Theory; 1.7 Electrons and Holes; 1.8 Doping; 1.9 Optical Properties; 1.10 Electronic Transport; 1.11 Examples of Semiconductors; Problems; References; Chapter 2: Defect Classifications; 2.1 Basic Definitions; 2.2 Energy Levels |
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2.3 Examples of Native Defects2.4 Examples of Nonhydrogenic Impurities; 2.5 Hydrogen; 2.6 Defect Symmetry; 2.7 Dislocations; Problems; References; Chapter 3: Interfaces and Devices; 3.1 Ideal Metal-Semiconductor Junctions; 3.2 Real Metal-Semiconductor Junctions; 3.3 Depletion Width; 3.4 The p-n Junction; 3.5 Applications of p-n Junctions; 3.6 The Metal-Oxide-Semiconductor Junction; 3.7 The Charge-Coupled Device; 3.8 Light-Emitting Devices; 3.9 The 2D Electron Gas; Problems; References; Chapter 4: Crystal Growth and Doping; 4.1 Bulk Crystal Growth |
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4.2 Dopant Incorporation During Bulk Crystal Growth4.3 Thin Film Growth; 4.4 Liquid Phase Epitaxy; 4.5 Chemical Vapor Deposition; 4.6 Molecular Beam Epitaxy; 4.7 Alloying; 4.8 Doping by Diffusion; 4.9 Ion Implantation; 4.10 Annealing and Dopant Activation; 4.11 Neutron Transmutation; Problems; References; Chapter 5: Electronic Properties; 5.1 Hydrogenic Model; 5.2 Wave Function Symmetry; 5.3 Donor and Acceptor Wave Functions; 5.4 Deep Levels; 5.5 Carrier Concentrations as a Function of Temperature; 5.6 Freeze-Out Curves; 5.7 Scattering Processes; 5.8 Hopping and Impurity Band Conduction |
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5.9 SpintronicsProblems; References; Chapter 6: Vibrational Properties; 6.1 Phonons; 6.2 Defect Vibrational Modes; 6.3 Infrared Absorption; 6.4 Interactions and Lifetimes; 6.5 Raman Scattering; 6.6 Wave Functions and Symmetry; 6.7 Oxygen in Silicon and Germanium; 6.8 Impurity Vibrational Modes in GaAs; 6.9 Hydrogen Vibrational Modes; Problems; References; Chapter 7: Optical Properties; 7.1 Free-Carrier Absorption and Reflection; 7.2 Lattice Vibrations; 7.3 Dipole Transitions; 7.4 Band-Gap Absorption; 7.5 Carrier Dynamics; 7.6 Exciton and Donorâ#x80;#x93;Acceptor Emission; 7.7 Isoelectronic Impurities |
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7.8 Lattice Relaxation7.9 Transition Metals; Problems; References; Chapter 8: Thermal Properties; 8.1 Defect Formation; 8.2 Charge State; 8.3 Chemical Potential; 8.4 Diffusion; 8.5 Microscopic Mechanisms of Diffusion; 8.6 Self-Diffusion; 8.7 Dopant Diffusion; 8.8 Quantum-Well Intermixing; Problems; References; Chapter 9: Electrical Measurements; 9.1 Resistivity and Conductivity; 9.2 Methods of Measuring Resistivity; 9.3 Hall Effect; 9.4 Capacitanceâ#x80;#x93;Voltage Profiling; 9.5 Carrier Emission and Capture; 9.6 Deep-Level Transient Spectroscopy |
| Notes |
9.7 Minority Carriers and Deep-Level Transient Spectroscopy |
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Print version record |
| Subject |
Semiconductor doping.
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Semiconductors -- Defects.
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Semiconductor doping
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Semiconductors -- Defects
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| Form |
Electronic book
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| Author |
Haller, Eugene E
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| ISBN |
9781351977982 |
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1351977989 |
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