Title Silicon carbide and related materials 2017 : selected peer reviewed papers from the 2017 International Conference on Silicon Carbide and Related Materials (ICSCRM 2017), September 17-22, 2017, Washington, DC, USA / edited by Robert Stahlbush [and five others]

Published Zurich, Switzerland : Trans Tech Publications, Limited, 2018

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Description 1 online resource (1014 pages) : illustrations Series Materials science forum ; volumes 924 Materials science forum ; v. 924. Contents Intro; Silicon Carbide and Related Materials 2017; Preface; Table of Contents; Chapter 1: Bulk and Epitaxial Growth; 1.1: Bulk Growth; SEMI Standards for SiC Wafers; Optimization of 150 mm 4H SiC Substrate Crystal Quality; Structural Characterization of the Growth Front of 4H-SiC Boules Grown Using the Physical Vapor Transport Growth Method; Investigation of Run-to-Run Fluctuation in Growth Conditions of Physical Vapor Transport Growth of 4H-SiC Crystals; Resistivity Increase in 6H-SiC Crystal Grown with Simple Modification in PVT Process The Effect of Stepped Wall of the Graphite Crucible in Top Seeded Solution Growth of SiC CrystalDevelopment of Solvent Inclusion Free 4H-SiC Off-Axis Wafer Grown by the Top-Seeded Solution Growth Technique; Effect of the Growth Conditions on the Crystal Quality in Solution Growth of SiC Using Cr Solvent without Molten Si; Dislocation Behavior in Bulk Crystals Grown by TSSG Method; Experimental Determination of Carbon Solubility in Si0.56Cr0.4M0.04 (M = Transition Metal) Solvents for Solution Growth of SiC; Modification of Crucible Shape in Top Seeded Solution Growth of SiC Crystal Solution Growth of SiC from the Crucible Bottom with Dipping under Unsaturation State of Carbon in SolventInfluence of Additives on Surface Smoothness and Polytype Stability in Solution Growth of n-Type 4H-SiC; Suppression of Polytype Transformation with Extremely Low-Dislocation-Density 4H-SiC Crystal in Two-Step Solution Method; 1.2: Epitaxial Growth; Status and Trends in Epitaxy and Defects; 99.9% BPD Free 4H-SiC Epitaxial Layer with Precisely Controlled Doping upon 3 x 150 mm Hot-Wall CVD; Growth of 150 mm 4H-SiC Epitaxial Layer by a Hot-Wall Reactor Glide of Basal Plane Dislocations during 150 mm 4H-SiC Epitaxial Growth by a Hot-Wall ReactorGrowth of 4H-SiC Epitaxial Layer through Optimization of Buffer Layer; High In-Wafer Uniformity of Growth Rate and Carrier Concentration on n-Type 4H-SiC Epitaxial Films Achieved by High Speed Wafer Rotation Vertical CVD Tool; Improved Uniformity of Silicon Carbide Epitaxy Grown in a High-Volume Multi-Cassette Epitaxy Reactor; Quick and Practical Cleaning Process for Silicon Carbide Epitaxial Reactor; Understanding the Chemistry in Silicon Carbide Chemical Vapor Deposition Triangular Defects Reduction and Uniformity Improvement of 4H-SiC Epitaxial Growth in a Planetary ReactorReduction of Surface and PL Defects on n-Type 4H-SiC Epitaxial Films Grown Using a High Speed Wafer Rotation Vertical CVD Tool; Influence and Mutual Interaction of Process Parameters on the Z1/2 Defect Concentration during Epitaxy of 4H-SiC; CVD Filling of Narrow Deep 4H-SiC Trenches in a Quasi-Selective Epitaxial Growth Mode; Hot Filament CVD Growth of 4H-SiC Epitaxial Layers; Stacking Faults Defects on 3C-SiC Homo-Epitaxial Films; Silicon (001) Heteroepitaxy on 3C-SiC(001)/Si(001) Seed Summary This collection of papers by the results of the 2017 International Conference on Silicon Carbide and Related Materials (ICSCRM 2017, September 17-22 in Washington, DC, USA) presents for readers the latest progress in the field of development and production of silicon carbide semiconductors and their application in the power electronic devices. Silicon Carbide, Semiconductors, Bulk and Epitaxial Growth, Surface Defects, Properties, Processing, MOS and MOSFET Structures, Power Devices, Circuits, Applications Materials Science Bibliography Includes bibliographical references and index Notes Chapter 2: Defects, Material Studies and Characterization Print version record Subject Silicon carbide -- Congresses Silicon carbide -- Electric properties -- Congresses Silicon-carbide thin films -- Congresses Nitrides -- Congresses Graphene -- Congresses Crystal growth -- Congresses Wide gap semiconductors -- Materials -- Congresses Wide gap semiconductors -- Materials -- Technological innovations -- Congresses TECHNOLOGY & ENGINEERING -- Engineering (General) TECHNOLOGY & ENGINEERING -- Reference. Crystal growth Graphene Nitrides Silicon carbide Silicon carbide -- Electric properties Silicon-carbide thin films Genre/Form Conference papers and proceedings Form Electronic book Author Stahlbush, Robert, editor ISBN 9781523122844 1523122846 9783035731453 3035731454

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