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E-book
Author GADEST (Conference) (14th : 2011 : Loipersdorf, Austria)

Title Gettering and defect engineering in semiconductor technology XIV : selected papers from the XIVth International Biannual Meeting on Gettering and Defect Engineering in Semiconductor [Technology], (GADEST2011) September 25-30, 2011, Loipersdorf (Fürstenfeld), Austria / edited by W. Jantsch and F. Schäffler
Published Durnten-Zuerich : Trans Tech, ©2011

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Description 1 online resource (xii, 520 pages) : illustrations
Series Solid state phenomena, 1012-0394 ; v. 178-179
Diffusion and defect data. Pt. B, Solid state phenomena ; v. 178-179.
Summary The papers contained herein cover the most important and timely issues in the field of "Gettering and Defect Engineering in Semiconductor Technology", ranging from the theoretical analysis of defect problems to practical engineering solutions, with the emphasis on Si-based materials. Apart from the traditional topics of defect and materials engineering, characterization, modeling and simulation, and the co-integration of various material classes, topics such as materials for solar cells and photonics are discussed. Defects in graphene and in nanocrystals and nanowires are also treated, making this a very up-to-date survey of the field. Review from Book News Inc.: Selected papers from a September 2011 meeting deal with fundamental and technological aspects of defects in electronic materials and devices. Papers are organized into 12 sections on areas such as silicon-based and advanced semiconductor materials, nanocrystals and quantum dots, crystalline silicon for solar cells, point defects in Si, defects at interfaces, defect and impurity characterization, gettering and defect engineering, advanced solar cells, silicon-based photonics, and modeling and simulation. Some specific topics addressed include recombination activity of twin boundaries in silicon ribbons, hydrogen decoration of vacancy related complexes in hydrogen implanted silicon, analysis of contaminated oxide-silicon interfaces, and spectroscopic studies of iron and chromium in germanium. Other areas examined include oxygen precipitation studied by X-ray diffraction techniques, structural defect studies of semiconductor crystals with Laue topography, tailoring the electrical properties of undoped GaP, and homogeneous and heterogeneous nucleation of oxygen in S-CZ. Jantsch and Schffler are affiliated with Johannes Kepler University, Austria
Analysis Gettering engineering
Defect engineering
Semiconductor technology
GADEST
Bibliography Includes bibliographical references and indexes
Notes Print version record
Subject Semiconductors -- Congresses
Getters -- Congresses
Silicon crystals -- Defects -- Congresses
Electrical engineering -- Materials -- Congresses
TECHNOLOGY & ENGINEERING -- Electronics -- Semiconductors.
TECHNOLOGY & ENGINEERING -- Electronics -- Solid State.
Electrical engineering -- Materials
Getters
Semiconductors
Silicon crystals -- Defects
Genre/Form Conference papers and proceedings
Form Electronic book
Author Jantsch, W. (Wolfgang), 1946-
Schläffer, F. (Friedrich)
ISBN 9783038135159
3038135151
Other Titles Also called: GADEST 2011 selected papers