| Description |
1 online resource (viii, 88 pages) : illustrations (some color) |
| Series |
SpringerBriefs in Electrical and Computer Engineering, 2191-8112 |
|
SpringerBriefs in electrical and computer engineering, 2191-8112
|
| Contents |
An introduction to high-speed DRAM -- An I/O Line Configuration and Organization of DRAM -- Clock generation and distribution -- Transceiver Design -- TSV Interface for DRAM |
| Summary |
This book provides an overview of recent advances in memory interface design at both the architecture and circuit levels. Coverage includes signal integrity and testing, TSV interface, high-speed serial interface including equalization, ODT, pre-emphasis, wide I/O interface including crosstalk, skew cancellation, and clock generation and distribution. Trends for further bandwidth enhancement are also covered. Enables readers with minimal background in memory design to understand the basics of high-bandwidth memory interface design; Presents state-of-the-art techniques for memory interface design; Covers memory interface design at both the circuit level and system architecture level |
| Bibliography |
Includes bibliographical references and index |
| Notes |
English |
|
Online resource; title from PDF title page (SpringerLink, viewed October 28, 2013) |
| Subject |
Computer storage devices.
|
|
Computer Storage Devices
|
|
TECHNOLOGY & ENGINEERING -- Mechanical.
|
|
Ingénierie.
|
|
Computer storage devices
|
| Form |
Electronic book
|
| Author |
Lee, Hyun-Woo, author
|
|
Song, Junyoung, author
|
| ISBN |
9783319023816 |
|
3319023810 |
|
1306200024 |
|
9781306200028 |
|
3319023802 |
|
9783319023809 |
|
