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Book Cover
E-book
Author Lundstrom, Mark.

Title Nanoscale transistors : device physics, modeling and simulation / Mark S. Lundstrom, Jing Guo
Published New York : Springer, ©2006

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Description 1 online resource (vi, 217 pages) : illustrations
Contents Basic Concepts -- Devices, Circuits and Systems -- The Ballistic Nanotransistors -- Scattering Theory of the MOSFET -- Nanowire Field-Effect Transistors -- Transistors at the Molecular Scale
Summary "Nanoscale transistors: Device Physics, Modeling and Simulation describes the recent development of theory, modeling, and simulation of nanostransistors for electrical engineers, physicists, and chemists working with nanoscale devices. Simple physical pictures and semi-analytical models, which were validated by detailed numerical simulations, are provided for both evolutionary and revolutionary nanotransistors." "The book is a useful reference for senior-level or graduate-level courses on nanoelectronics, modeling and simulation. It is also valuable to scientists and engineers who are pushing MOSFETs to their limits and developing revolutionary nanoscale devices."--Jacket
Bibliography Includes bibliographical references and index
In Springer e-books
Subject Nanotechnology.
Metal oxide semiconductor field-effect transistors -- Mathematical models
Nanostructured materials -- Mathematical models
Electronics.
Electronics
Nanotechnology
TECHNOLOGY & ENGINEERING -- Electronics -- Transistors.
Nanostructured materials -- Mathematical models.
Nanotechnology.
Metal oxide semiconductor field-effect transistors -- Mathematical models.
Chimie.
Science des matériaux.
Metal oxide semiconductor field-effect transistors -- Mathematical models
Nanotechnology
Form Electronic book
Author Guo, Jing, 1977-
LC no. 2005933746
ISBN 0387280030
9780387280035
6610612218
9786610612215