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E-book
Author Majumdar, Gourab, author

Title Power Devices for Efficient Energy Conversion / Gourab Majumdar, Ikunori Takata
Published Singapore : CRC Press LLC : Pan Stanford Publishing, 2018
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Description 1 online resource
Contents Cover; Half title; Title; Copyright; Contents; Preface; Chapter 1 Introduction; 1.1 Era Predating the Birth of Power Semiconductor Devices; 1.2 Dawn of Power Electronics; 1.3 Japan's Leading Effort in Power Electronics; 1.4 Chronology of Power Devices in the 1980s; 1.5 Chronology of Power Modules in the 1980s; 1.6 History of Recent Power Switching Semiconductors; 1.7 Key Role of Power Devices for Efficient Power Conversion; 1.7.1 Role of Devices in Power Amplification; 1.7.2 Role of Devices in Power Switching Applications; 1.7.2.1 Power losses by power switches in power conversion electronics
2.4.3 Basic Operation of a pin Diode2.4.4 High-Voltage Large-Current Operation of a pin Diode; 2.5 Fast-Recovery Diode for a Typical Freewheeling Function; 2.5.1 Need for First-Recovery Diodes; 2.5.2 Effect of Lifetime Control; 2.5.3 Control Methods of the Lifetime; 2.5.4 Various Recombination Models; 2.5.5 Leakage Current Caused by Lifetime Killers; 2.5.5.1 Pair generation leakage current; 2.5.5.2 Diffusion leakage current; 2.5.6 Interpretation of Observed JF-VF Characteristics; 2.6 Devices of the Thyristor Family; 2.6.1 Thyristor; 2.6.2 GTO/GCT; 2.7 Bipolar Junction Transistors
2.7.1 BJT Structures2.7.2 Basic Operation of the BJT; 2.7.3 High-Voltage Large-Current Operation of the BJT; 2.7.4 Safe Operating Area of the BJT; 2.8 Metal-Oxide-Semiconductor Field-Effect Transistors; 2.9 Insulated Gate Bipolar Transistors; 2.9.1 IGBT Structures; 2.9.2 Basic Operation of the IGBT; 2.9.3 High-Voltage Large-Current Operation of the IGBT; 2.9.4 Safe Operating Area of the IGBT; 2.9.4.1 Observation of IGBT destructions; 2.9.4.2 Destruction mechanism of real IGBTs; Chapter 3 Applied Power Device Family: Power Modules and Intelligent Power Modules
3.1 Review of the Power Module Concept and Evolution History3.2 Power Module Constructional Features and Design Aspects; 3.2.1 Basic Aspects of Power Module Construction and Design; 3.2.1.1 What are the characteristics required from a power module package?; 3.2.1.2 What are the features and issues related to typical power module package designs?; 3.2.2 Fundamentals of Power Module Structural Reliability and Life Endurance; 3.3 State-of-the-Art Key Power Module Components; 3.3.1 Dual-in-Line Intelligent Power Module; 3.3.2 Intelligent Power Module
Chapter 2 Basic Technologies of Major Power Devices2.1 Power Device Categories; 2.2 Key Semiconductor Operation Principles; 2.2.1 Essence of the Power Device; 2.2.2 Characteristics of the Semiconductor; 2.2.3 p-Type and n-Type Semiconductors; 2.2.4 Potential Barrier between Regions Having Different Impurity Concentrations; 2.3 Basic Operation of Power Devices; 2.3.1 Reverse Voltage Blocking; 2.3.2 Forward Conducting; 2.3.3 Voltage-Holding Ability with Large Current: SOA; 2.4 Diode Rectifiers; 2.4.1 Diode Structures; 2.4.2 Transient Operation of a pin Diode
Bibliography Includes bibliographical references and index
Notes Online resource; title from PDF title page (EBSCO, viewed April 30, 2018)
Subject Energy conversion.
Power electronics.
Semiconductors.
Form Electronic book
Author Takata, Ikunori
ISBN 1351262300 (electronic bk.)
1351262319
9781351262309 (electronic bk.)
9781351262316