Description |
1 online resource (xi, 245 pages) : illustrations (some color) |
Series |
Microsystems and nanosystems |
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Microsystems and nanosystems.
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Contents |
880-01 Piezoresistance fundamentals -- Sensitivity, noise and resolution -- Fabrication and process modeling -- Temperature effects -- Design optimization -- Alternative materials and transduction methods |
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880-01/(S Machine generated contents note: 1. Introduction -- 1.1. Early Piezoresistor History -- 1.2. Device and Technology Timeline -- 1.2.1. Strain Gauges -- 1.2.2. Pressure Sensors -- 1.2.3. Cantilever Beams -- 1.2.4. Inertial Sensing -- 1.2.5. Resonators -- 1.2.6. Shear Stress Sensing -- 1.3. Summary and Roadmap -- 2. Piezoresistance Fundamentals -- 2.1. Notation Fundamentals -- 2.1.1. Crystal Structure -- 2.1.2. Stress, Strain and Tensors -- 2.2. Piezoresistivity -- 2.2.1. Crystallographic Orientation -- 2.2.2. Piezoresistance Factor -- 2.2.3. Nonlinearity -- 2.2.4. Theoretical Models -- 2.3. Signal Conditioning -- 2.3.1. Process Variation and Temperature Compensation -- 2.3.2. Heterodyne Biasing -- 2.4. Summary -- 3. Sensitivity, Noise and Resolution -- 3.1. Noise -- 3.1.1. Brief Introduction to Noise -- 3.1.2. Johnson Noise -- 3.1.3. 1/f Noise -- 3.1.4. Amplifier Noise -- 3.1.5. Thermomechanical Noise -- 3.1.6. Noise Summary -- 3.2. Sensitivity -- 3.2.1. Resistance Factor (γ) -- 3.2.2. Sensitivity Factor (β) -- 3.2.3. Transverse Loading Factor (φ) -- 3.3. Resolution Example -- 3.4. Summary -- 4. Fabrication and Process Modeling -- 4.1. Model Assumptions -- 4.2. Concentration Limits -- 4.3. Predeposition -- 4.4. Ion Implantation -- 4.5. Epitaxy -- 4.6. Polysilicon -- 4.7. Electrical Modeling -- 4.8. Experimental Validation Techniques -- 4.9. Practical Notes -- 4.9.1. Wafer Selection -- 4.9.2. Dopant-Induced Lattice Strain -- 4.9.3. Piezoresistor Surface Damage -- 4.9.4. Lateral Dopant Diffusion -- 4.9.5. Excess Electrical Resistance -- 4.10. Summary -- 5. Temperature Effects -- 5.1. Temperature Coefficient of Sensitivity -- 5.2. Temperature Coefficient of Resistance -- 5.3. Piezoresistor Self-Heating -- 5.3.1. Qualitative Example -- 5.3.2. Thermal Conductivity of Typical Materials -- 5.3.3. Heat Transfer Fundamentals -- 5.3.4. Convective Heat Transfer -- 5.3.5. Example Experimental and Modeling Results -- 5.3.6. Analytical Temperature Approximations -- 5.4. Power Dissipation and Sensor Resolution -- 5.5. Summary -- 6. Design Optimization -- 6.1. Optimization Fundamentals -- 6.2. Analytical Optimization -- 6.3. Numerical Optimization -- 6.4. Example: Fabrication Process Selection -- 6.4.1. Problem Definition -- 6.4.2. Dopant Concentration -- 6.4.3. Dopant Type -- 6.4.4. Fabrication Method -- 6.5. Final Thoughts on Design -- 6.6. Summary -- 7. Alternative Materials and Transduction Methods -- 7.1. Alternative Piezoresistive Materials -- 7.1.1. Silicon Carbide -- 7.1.2. Diamond -- 7.1.3. Nanotubes and Nanowires -- 7.1.4. Metals -- 7.2. Alternative Transduction Mechanisms -- 7.2.1. Optical -- 7.2.2. Capacitive -- 7.2.3. Piezoelectric -- 7.2.4. Pseudo-Hall and Piezojunction Effects -- 7.3. Summary |
Summary |
This book is a comprehensive guide to piezoresistive MEMS sensor design. Piezoresistors transduce mechanical loads into electrical signals via a resistance change, and comprise a substantial portion of the commercial MEMS sensors market. Applications of piezoresistors include strain gauges, accelerometers, pressure sensors, force sensors, chemical sensors and resonators |
Bibliography |
Includes bibliographical references |
Notes |
English |
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Online resource; title from PDF title page (SpringerLink, viewed November 4, 2013) |
Subject |
Piezoelectric devices -- Design and construction
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Electric resistors.
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Microelectromechanical systems -- Design and construction
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TECHNOLOGY & ENGINEERING -- Mechanical.
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Ingénierie.
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Electric resistors
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Microelectromechanical systems -- Design and construction
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Piezoelectric devices -- Design and construction
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Form |
Electronic book
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Author |
Pruitt, Beth, author.
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ISBN |
9781461485179 |
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1461485177 |
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1461485169 |
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9781461485162 |
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