Title MOCVD growth of GaN-based high electron mobility transistor structures / Jr-Tai Chen

Published Linköping, Sweden : Linköping University, 2015 ©2015

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Description 1 online resource (81 pages) : illustrations (some color) Series Linköping Studies in Science and Technology Dissertations, 0345-7524 ; Number 1662 Linköping studies in science and technology. Dissertations ; no. 1662. Contents Abstract -- Populärvetenskaplig sammanfattning -- Preface -- Acknowledgement -- Content -- 1 History and challenges -- 2 Properties of III-nitrides -- 3 Fundamentals of GaN-based HEMT structures -- 4 MOCVD growth of GaN-based HEMT structures -- 5 Characterizations of GaN-based HEMT structures -- References -- Publications Bibliography Includes bibliographical references Notes Online resource; title from PDF title page (ebrary, viewed May 5, 2015) Subject Semiconductors -- Materials Epitaxy. Epitaxy Semiconductors -- Materials Form Electronic book Author Semiconductor Materials Division. Department of Physics, Chemistry, and Biology. Linköping University, issuing body ISBN 9789175190730 9175190737

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