Book Cover

Title Fundamentals of III-V semiconductor MOSFETs / edited by Serge Oktyabrsky, Peide Ye
Published New York ; London : Springer, 2010
Online access available from:
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Description 1 online resource (xv, 445 pages) : illustrations
Contents Towards III-V digital MOSFET circuits -- Physics of compound semiconductors: band-engineered heterostructures and strain effects -- Physics and modeling of compound semiconductor MOSFETs -- P-channel MOSFETs -- Compound semiconductor technology: MBE and MOCVD -- Properties and trade-offs of compound semiconductor MOSFETs -- Electronic structure and properties of high-k gate oxides -- Interface chemistry of III-V's with oxides -- Heterostructure FETs for digital circuits -- Interface passivation techniques -- Source/drain contact technologies -- MOSFETs with Ga2O3 gate oxide -- MOSFETs with ALD high-k oxides -- Narrow bandgap MOSFETs: InAs and InSb as channel materials -- GaN based MOSFETs -- Electrical measurement issues for gate stacks and FETs -- Circuits with III-V MOSFETs
Summary III-V Compound Semiconductor MOSFETs presents the fundamentals and current status of research of compound semiconductor metal-oxide-semiconductor field-effect transistors (MOSFETs) that are envisioned as a future replacement of silicon in digital circuits. The material covered begins with a review of specific properties of III-V semiconductors and available technologies making them attractive to MOSFET technology, such as band-engineered heterostructures, effect of strain, nanoscale control during epitaxial growth. Due to the lack .
Bibliography Includes bibliographical references and index
Notes Print version record
Subject Metal oxide semiconductor field-effect transistors -- Design and construction.
Electronic circuit design.
Form Electronic book
Author Oktyabrsky, Serge.
Ye, Peide D.
LC no. 2010920631
ISBN 1441915478