Limit search to available items
Book Cover
E-book
Author Gao, Jianjun, 1968-

Title RF and microwave modeling and measurement techniques for compound field effect transistors / Jianjun Gao
Published Raleigh, NC : SciTech Pub., ©2010
Online access available from:
IET eBook Collection    View Resource Record  

Copies

Description 1 online resource (x, 339 pages) : illustrations
Contents Representation of Microwave Two-Port Network -- Microwave and RF Measurement Techniques -- FET Small Signal Modeling and Parameter Extraction -- FET Nonlinear Modeling and Parameter Extraction -- Microwave Noise Modeling and Parameter Extraction Technique for FETs -- Artificial Neural Network Modeling Technique for FET
Summary "This book is an introduction to microwave and RF signal modeling and measurement techniques for field effect transistors. It assumes only a basic course in electronic circuits and prerequisite knowledge for readers to apply the techniques and improve the performance of integrated circuits, reduce design cycles and increase their chance at first time success. The first chapters offer a general overview and discussion of microwave signal and noise matrices, and microwave measurement techniques. The following chapters address modeling techniques for field effect transistors and cover models such as: small signal, large signal, noise, and the artificial neural network based."--Pub. desc
Bibliography Includes bibliographical references and index
Notes Print version record
Subject Field-effect transistors -- Testing
Compound semiconductors -- Testing
Field-effect transistors -- Mathematical models
Compound semiconductors -- Mathematical models
Microwave measurements.
Radio measurements.
TECHNOLOGY & ENGINEERING -- Electronics -- Transistors.
Compound semiconductors -- Mathematical models
Field-effect transistors -- Mathematical models
Microwave measurements
Radio measurements
measurement systems.
microwave field effect transistors.
Form Electronic book
ISBN 9781613442869
1613442866
9781613530900
1613530900
Other Titles RF and microwave modeling and measurement techniques for field effect transistors