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Book Cover
E-book
Author Mrozek, Ireneusz, author

Title Multi-run memory tests for pattern sensitive faults / Ireneusz Mrozek
Published Cham : Springer, [2019]
©2019

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Description 1 online resource
Contents Introduction to digital memory -- Basics of functional RAM testing -- Multi-cell faults -- Controlled random testing -- Multi-run tests based on background changing -- Multi-run tests based on address changing -- Multiple controlled random testing -- Pseudo exhaustive testing based on march tests -- Conclusion
Summary This book describes efficient techniques for production testing as well as for periodic maintenance testing (specifically in terms of multi-cell faults) in modern semiconductor memory. The author discusses background selection and address reordering algorithms in multi-run transparent march testing processes. Formal methods for multi-run test generation and many solutions to increase their efficiency are described in detail. All methods presented ideas are verified by both analytical investigations and numerical simulations. Provides the first book related exclusively to the problem of multi-cell fault detection by multi-run tests in memory testing process; Presents practical algorithms for design and implementation of efficient multi-run tests; Demonstrates methods verified by analytical and experimental investigations
Bibliography Includes bibliographical references and index
Notes Online resource; title from PDF title page (EBSCO, viewed July 12, 2018)
Subject Semiconductor storage devices -- Testing
Computer storage devices -- Testing
Random access memory -- Testing
Computer architecture & logic design.
Electronics engineering.
Circuits & components.
TECHNOLOGY & ENGINEERING -- Mechanical.
Computer storage devices -- Testing
Random access memory -- Testing
Semiconductor storage devices -- Testing
Form Electronic book
ISBN 9783319912042
3319912046
3319912038
9783319912035
9783319912059
3319912054
9783030081980
3030081982