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Author Bogdanowicz, Janusz

Title Photomodulated optical reflectance : a fundamental study aimed at non-destructive carrier profiling in silicon / Janusz Bogdanowicz
Published Berlin ; New York : Springer, [2012]
©2012
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Description 1 online resource
Series Springer Theses, 2190-5053
Springer theses.
Contents Introduction -- Theory of Perturbation of the Reflectance -- Theory of Perturbation of the Refractive Index -- Theory of Carrier and Heat Transport in Homogeneously Doped Silicon -- Extension of the Transport Theory to Ultra-Shallow Doped Silicon Layers -- Assessment of the Model -- Application of the Model to Carrier Profiling -- Conclusions and Recommendations
Summary One of the critical issues in semiconductor technology is the precise electrical characterization of ultra-shallow junctions. Among the plethora of measurement techniques, the optical reflectance approach developed in this work is the sole concept that does not require physical contact, making it suitable for non-invasive in-line metrology. This work develops extensively all the fundamental physical models of the photomodulated optical reflectance technique and introduces novel approaches that extend its applicability from dose monitoring towards detailed carrier profile reconstruction. It represents a significant breakthrough in junction metrology with potential for industrial implementation
Analysis Physics
Semiconductors
Applied and Technical Physics
Notes Ph. D. University of Leuven
Bibliography Includes bibliographical references
Subject Semiconductors -- Testing -- Optical methods.
Silicon -- Optical properties.
Silicon -- Nondestructive testing.
Genre/Form Academic theses.
Form Electronic book
ISBN 9783642301087 (electronic bk.)
3642301088 (electronic bk.)