Limit search to available items
Book Cover
Author Xiao, Hong, 1961- author

Title 3D IC devices, technologies, and manufacturing / Hong Xiao
Published Bellingham, Washington, USA SPIE Press, [2016]


Location Call no. Vol. Availability
 W'PONDS  621.3815 Xia/Tid  AVAILABLE
Description xi, 189 pages ; 26 cm
Contents Preface -- Manufacturing processes of 3D IC devices -- Introduction -- 3D devices in the DRAM and BWL DRAM process -- Brief summary of DRAM -- Review questions -- 3D-NAND flash and its manufacturing process -- Introduction -- 3D-NAND flash memory manufacturing processes -- 3D-NAND summary and discussion -- Review questions -- High-k, metal-gate FinFET CMOS manufacturing process -- Introduction -- FinFET basics -- FinFET process -- Advanced FinFET CMOS process -- Advanced FinFET SRAM -- FinFET CMOS scaling -- Review questions -- Summary and future trends of the 3D IC process -- Scaling MOSFET technology after 14 nm -- Scaling and development of memory devices -- 3D packaging -- Other 3D devices and 3D IC processing techniques -- The end of Moore's Law?
Summary This book discusses the advantages of 3D devices and their applications in dynamic random access memory (DRAM), 3D-NAND flash, and advanced-technology-node CMOS ICs. Topics include the development of DRAM cell transistors and storage node capacitors; the manufacturing process of advanced buried-word-line DRAM; 3D FinFET CMOS IC devices; scaling trends of CMOS logic; devices that may be used in the "post-CMOS" era; and 3D technologies, such as the 3D-wafer process integration of silicon-on-ILD and TSV-based 3D packaging
Notes Formerly CIP. Uk
Bibliography Includes bibliographical references (pages 181-185) and index
Notes Also issued online
Subject Three-dimensional integrated circuits.
Author SPIE (Society)
LC no. 2016006975
ISBN 9781510601468 (softcover)