| Description |
xi, 189 pages ; 26 cm |
| Contents |
Preface -- Manufacturing processes of 3D IC devices -- Introduction -- 3D devices in the DRAM and BWL DRAM process -- Brief summary of DRAM -- Review questions -- 3D-NAND flash and its manufacturing process -- Introduction -- 3D-NAND flash memory manufacturing processes -- 3D-NAND summary and discussion -- Review questions -- High-k, metal-gate FinFET CMOS manufacturing process -- Introduction -- FinFET basics -- FinFET process -- Advanced FinFET CMOS process -- Advanced FinFET SRAM -- FinFET CMOS scaling -- Review questions -- Summary and future trends of the 3D IC process -- Scaling MOSFET technology after 14 nm -- Scaling and development of memory devices -- 3D packaging -- Other 3D devices and 3D IC processing techniques -- The end of Moore's Law? |
| Summary |
This book discusses the advantages of 3D devices and their applications in dynamic random access memory (DRAM), 3D-NAND flash, and advanced-technology-node CMOS ICs. Topics include the development of DRAM cell transistors and storage node capacitors; the manufacturing process of advanced buried-word-line DRAM; 3D FinFET CMOS IC devices; scaling trends of CMOS logic; devices that may be used in the "post-CMOS" era; and 3D technologies, such as the 3D-wafer process integration of silicon-on-ILD and TSV-based 3D packaging |
| Notes |
Formerly CIP. Uk |
| Bibliography |
Includes bibliographical references (pages 181-185) and index |
| Notes |
Also issued online |
| Subject |
Three-dimensional integrated circuits.
|
| Author |
SPIE (Society)
|
| LC no. |
2016006975 |
| ISBN |
9781510601468 (softcover) |
|
