This page contains enriched content visible when JavaScript is enabled.
My Account
Library Home
Your session will expire automatically in
0
seconds.
Continue session
End session now
Save to My Lists
Export
Return to Browse
Search Type1
Keyword
Title
Author (Last name first)
Subject
ISBN/ISSN
Call Number
Unit Code
Libraries Australia No.
Library of Congress No.
Search
Search Scope
Entire Collection
Print Books
E-books
All books
E-journals
All journals
Databases
All e-resources
Streaming Video
DVDs
Curriculum Resources
Deakin Theses
Special Collections
Melbourne Burwood
Warrnambool
Geelong Waterfront
Geelong Waurn Ponds
Previous Record
Next Record
  Permalink    
Author
Chen, Jr-Tai, author
Title
MOCVD growth of GaN-based high electron mobility transistor structures / Jr-Tai Chen
Published
Linköping, Sweden : Linköping University, 2015
©2015
Click on the following:
ProQuest Ebook Central
Copies
Description
1 online resource (81 pages) : illustrations (some color)
Series
Linköping Studies in Science and Technology Dissertations, 0345-7524 ; Number 1662
Linköping studies in science and technology. Dissertations ; no. 1662.
Contents
Abstract -- Populärvetenskaplig sammanfattning -- Preface -- Acknowledgement -- Content -- 1 History and challenges -- 2 Properties of III-nitrides -- 3 Fundamentals of GaN-based HEMT structures -- 4 MOCVD growth of GaN-based HEMT structures -- 5 Characterizations of GaN-based HEMT structures -- References -- Publications
Bibliography
Includes bibliographical references
Notes
Online resource; title from PDF title page (ebrary, viewed May 5, 2015)
Subject
Semiconductors -- Materials
Epitaxy.
Epitaxy
Semiconductors -- Materials
Form
Electronic book
Author
Semiconductor Materials Division. Department of Physics, Chemistry, and Biology. Linköping University, issuing body
ISBN
9789175190730
9175190737
  Permalink