Book Cover
Author Baliga, B. Jayant, 1948-

Title Silicon Rf Power Mosfets
Published River Edge : World Scientific Publishing Company, 2005
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Description 1 online resource (320 pages)
Contents Preface; References; Contents; Chapter 1 Introduction; 1.1 First Generation Mobile Communication Networks; 1.2 Second Generation Mobile Communication Networks; 1.3 Third Generation Mobile Communication Networks; 1.4 Migration Path to Third Generation Networks; 1.5 Base Station Market; 1.6 Summary; References; Chapter 2 RF Power Amplifiers; 2.1 Base Station Basic Architecture; 2.2 RF Power Amplifier; 2.3 Class A Amplifier; 2.4 Class B Amplifier; 2.5 Class AB Amplifier; 2.6 Multi-Stage Power Amplifier; 2.7 Linearization of Power Amplifiers; Feed-forward Linearization
4.7 LD-MOSFET RF Performance4.8 LD-MOSFET Thermal Effects; 4.9 LD-MOSFET with Faraday Shields; 4.10 LD-MOSFET with Thinner Gate Oxide; 4.11 LD-MOSFET Conclusions; References; Chapter 5 Vertical-Diffused MOSFETs; 5.1 Device Cell Structure; 5.2 VD-MOSFET Simulation Structure; 5.3 VD-MOSFET Blocking Characteristics; 5.4 VD-MOSFET On-State Characteristics; 5.5 VD-MOSFET Output and Transfer Characteristics; 5.6 VD-MOSFET Capacitances; 5.7 VD-MOSFET RF Performance; 5.8 VD-MOSFET Thermal Effects; 5.9 VD-MOSFET with Terraced Gate Oxide; 5.10 VD-MOSFET with Thinner Gate Oxide
5.11 VD-MOSFET ConclusionsReferences; Chapter 6 Charge-Coupled MOSFETs; 6.1 Device Cell Structure; 6.2 CC-MOSFET Simulation Structure; 6.3 CC-MOSFET Blocking Characteristics; 6.4 CC-MOSFET On-State Characteristics; 6.5 CC-MOSFET Output and Transfer Characteristics; 6.6 CC-MOSFET Capacitances; 6.7 CC-MOSFET RF Performance; 6.8 CC-MOSFET Thermal Effects; 6.9 GD-MOSFET Structure; 6.10 GD-MOSFET Blocking Characteristics; 6.11 GD-MOSFET On-State Characteristics; 6.12 GD-MOSFET Output and Transfer Characteristics; 6.13 GD-MOSFET Capacitances; 6.14 GD-MOSFET RF Performance
6.15 GD-MOSFET with Thinner Gate Oxide6.16 CC-MOSFET/GD-MOSFET Conclusions; References; Chapter 7 Super-Linear MOSFETs; 7.1 Device Cell Structure; 7.2 SL-MOSFET Simulation Structure; 7.3 SL-MOSFET Blocking Characteristics; 7.4 SL-MOSFET On-State Characteristics; 7.5 SL-MOSFET Output and Transfer Characteristics; 7.6 SL-MOSFET Capacitances; 7.7 SL-MOSFET RF Performance; 7.8 SL-MOSFET Thermal Effects; 7.9 SL-MOSFET with Thinner Gate Oxide; 7.10 SL-MOSFET Conclusions; References; Chapter 8 Planar Super-Linear MOSFETs; 8.1 Device Cell Structure; 8.2 Planar SL-MOSFET Simulation Structure
Linearization by Pre-distortion2.8 Summary; References; Chapter 3 MOSFET PHYSICS; 3.1 Power MOSFET Structure and Operation; 3.2 Super-Linear Power MOSFET Physics; 3.3 Power MOSFET On-Resistance; Planar D-MOSFET Structure; Vertical MOSFET Structure with Charge Coupling; Lateral MOSFET Structure with Charge Coupling; 3.4 Summary; References; Chapter 4 Lateral-Diffused MOSFETs; 4.1 Device Cell Structure; 4.2 LD-MOSFET Simulation Structure; 4.3 LD-MOSFET Blocking Characteristics; 4.4 LD-MOSFET On-State Characteristics; 4.5 LD-MOSFET Output and Transfer Characteristics; 4.6 LD-MOSFET Capacitances
Summary The world-wide proliferation of cellular networks has revolutionizedtelecommunication systems. The transition from Analog to Digital RFtechnology enabled substantial increase in voice traffic usingavailable spectrum, and subsequently the delivery of digitally basedtext messaging, graphics and even streaming video. The deployment ofdigital networks has required migration to multi-carrier RF poweramplifiers with stringent demands on linearity and efficiency. Thisbook describes the physics, design considerations and RF performanceof silicon power Metal-Oxide- Semiconductor Field Effect Transisto
Notes 8.3 Planar SL-MOSFET Blocking Characteristics
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Form Electronic book
ISBN 9789812569325