""Contents""; ""Foreword""; ""Preface""; ""Definition of Symbols Used for Variables and Constants""; ""1. Semiconductor Device Physics""; ""1.1 Band Structure Concept""; ""1.1.1 Energy Bands and Quasi Particles""; ""1.1.2 Effective Mass Approximation""; ""1.2 Carrier Density and Fermi Level in Semiconductors""; ""1.2.1 Impurities in Semiconductors""; ""1.2.2 Impurity Levels""; ""1.2.3 Number of Carriers under Thermal Equilibrium""; ""1.2.3.1 Carrier Density in Pure Semiconductors""; ""1.2.3.2 Carrier Density in Impure or Doped Semiconductors""; ""1.2.4 Fermi Level""; ""1.3 P-N Junction""
""1.3.1 P-N Junction in Thermal Equilibrium""""1.3.2 P-N Junction with External Voltages""; ""1.4 Device Simulation""; ""1.4.1 Basic Equations""; ""1.4.2 Linearization and Discretization of Poisson Equation""; ""1.4.3 Device Simulation of MOSFETs""; ""1.5 Summary of Equations and Symbols Presented in Chapter 1 for Semiconductor Device Physics""; ""Bibliography""; ""2. Basic Compact Surface-Potential Model of the MOSFET""; ""2.1 Compact Modeling Concept""; ""2.2 Device Structure Parameters of the MOSFET""; ""2.3 Surface Potentials""; ""2.4 Charge Densities""; ""2.5 Drain Current""
""2.6 Summary of Equations and Model Parameters Presented in Chapter 2 for Basic Compact Surface-Potential Model of the MOSFET""""2.6.1 Section 2.2: Device Structure Parameters of the MOSFET""; ""2.6.2 Section 2.3: Surface Potentials""; ""2.6.3 Section 2.4: Charge Densities""; ""2.6.4 Section 2.5: Drain Current""; ""Bibliography""; ""3. Advanced MOSFET Phenomena Modeling""; ""3.1 Threshold Voltage Shift""; ""3.1.1 (I) Short-Channel Effects""; ""3.1.2 (II) Reverse-Short-Channel Effects""; ""3.2 Depletion Effect of the Poly-Si Gate""; ""3.3 Quantum-Mechanical Effects""; ""3.4 Mobility Model""
""3.4.1 Low Field Mobility""""3.4.2 High Field Mobility""; ""3.5 Channel-Length Modulation""; ""3.6 Narrow-Channel Effects""; ""3.6.1 Threshold Voltage Shift""; ""3.6.2 Mobility Modification due to a Narrow Gate""; ""3.6.3 Leakage Current due to STI Technology""; ""3.6.4 Small-Geometry Effects""; ""3.7 Effects of the Length of the Diffused Source/Drain Contacts in Shallow-Trench Isolation (STI) Technologies""; ""3.8 Temperature Dependences""; ""3.9 Conservation of Symmetry at Vds = 0""; ""3.10 Harmonic Distortions""
""3.11 Summary of Equations and Model Parameters Appearing in Chapter 3 for Advanced MOSFET Phenomena Modeling""""3.11.1 Section 3.1: Threshold Voltage Shift""; ""3.11.2 Section 3.2: Depletion Effect of the Poly-Silicon Gate""; ""3.11.3 Section 3.3: Quatum-Mechanical Effects""; ""3.11.4 Section 3.4: Mobility Model""; ""3.11.5 Section 3.5: Channel-Length Modulation""; ""3.11.6 Section 3.6: Narrow-Channel Effects""; ""3.11.7 Section 3.7: Effect of the Source/Drain Diffusion Length for Shallow-Trench Isolation (STI) Technologies""; ""3.11.8 Section 3.8: Temperature Dependences""
Summary
This volume provides a timely description of the latest compact MOS transistor models for circuit simulation. The first generation BSIM3 and BSIM4 models that have dominated circuit simulation in the last decade are no longer capable of characterizing all the important features of modern sub-100nm MOS transistors. This book discusses the second generation MOS transistor models that are now in urgent demand and being brought into the initial phase of manufacturing applications. It considers how the models are to include the complete drift-diffusion theory using the surface potential variable in the MOS transistor channel in order to give one characterization equation
