| Description |
1 online resource (xxxviii, 1816 pages) : illustrations |
| Contents |
Cover13; -- Preface -- About the Editors -- List of Authors -- Contents -- List of Abbreviations -- Part A Fundamentals of Crystal Growth and Defect Formation -- 1 Crystal Growth Techniques and Characterization: An Overview -- 1.1 Historical Developments -- 1.2 Theories of Crystal Growth -- 1.3 Crystal Growth Techniques -- 1.4 Crystal Defects and Characterization -- References -- 2 Nucleation at Surfaces -- 2.1 Equilibrium Crystal8211;Ambient Phase -- 2.2 Work for Nucleus Formation -- 2.3 Rate of Nucleation -- 2.4 Saturation Nucleus Density -- 2.5 Second-Layer Nucleation in Homoepitaxy -- 2.6 Mechanism of Clustering in Heteroepitaxy -- 2.7 Effect of Surfactants on Nucleation -- 2.8 Conclusions and Outlook -- References -- 3 Morphology of Crystals Grown from Solutions -- 3.1 Equilibrium Shape -- 3.2 The Theoretical Growth Shape -- 3.3 Factors Influencing the Crystal Habit -- 3.4 Surface Structure -- 3.5 Crystal Defects -- 3.6 Supersaturation 8211; Growth Kinetics -- 3.7 Solvent -- 3.8 Impurities -- 3.9 Other Factors -- 3.10 Evolution of Crystal Habit -- 3.11 A Short Conclusion -- 3.A Appendix -- References -- 4 Generation and Propagation of Defects During Crystal Growth -- 4.1 Overview -- 4.2 Inclusions -- 4.3 Striations and Growth Sectors -- 4.4 Dislocations -- 4.5 Twinning -- 4.6 Perfection of Crystals Grown Rapidly from Solution -- References -- 5 Single Crystals Grown Under Unconstrained Conditions -- 5.1 Background -- 5.2 Smooth and Rough Interfaces: Growth Mechanism and Morphology -- 5.3 Surface Microtopography -- 5.4 Growth Forms of Polyhedral Crystals -- 5.5 Internal Morphology -- 5.6 Perfection of Single Crystals -- References -- 6 Defect Formation During Crystal Growth from the Melt -- 6.1 Overview -- 6.2 Point Defects -- 6.3 Dislocations -- 6.4 Second-Phase Particles -- 6.5 Faceting -- 6.6 Twinning -- 6.7 Summary -- References -- Part B Crystal Growth from Melt Techniques -- 7 Indium Phosphide: Crystal Growth and Defect Control by Applying Steady Magnetic Fields -- 7.1 Historical Overview -- 7.2 Magnetic Liquid-Encapsulated Growth -- 7.3 Magnetic Field Interactions with the Melt -- 7.4 Dislocation Density -- 7.5 Magnetic Field Effects on Impurity Segregation -- 7.6 Optical Characterization of InP:Fe -- 7.7 Summary -- References -- 8 Czochralski Silicon Single Crystals for Semiconductor and Solar Cell Applications -- 8.1 Silicon Single Crystals for LSIs and Solar Applications -- 8.2 Control of Crystal Defects in Czochralski Silicon -- 8.3 Growth and Characterization of Silicon Multicrystal for Solar Cell Applications -- 8.4 Summary -- References -- 9 Czochralski Growth of Oxide Photorefractive Crystals -- 9.1 Background -- 9.2 Crystal Growth -- 9.3 Design and Development of Czochralski Growth System -- 9.4 Growth of Lithium Niobate Crystals and Its Characteristics -- 9.5 Other Oxide Photorefractive Crystals -- 9.6 Growth of Sillenite Crystals and Its Characteristics -- 9.7 Conclusions -- References -- 10 Bulk Crystal Growth of Ternary III8211;V Semiconductors -- 10.1 III8211;V Ternary Semiconductors -- 10.2 Need for Ternary Substrates -- 10.3 Criteria for Device-Grade Ternary Substrates -- 10.4 Introduction to Bridgman Crystal Growth Techniques -- 10.5 Overview of III8211 |
| Summary |
Over the years, many successful attempts have been made to describe the art and science of crystal growth. Most modern advances in semiconductor and optical devices would not have been possible without the development of many elemental, binary, ternary, and other compound crystals of varying properties and large sizes. The objective of the Springer Handbook of Crystal Growth is to present state-of-the-art knowledge of both bulk and thin-film crystal growth. The goal is to make readers understand the basics of the commonly employed growth processes, materials produced, and defects generated. Almost 100 leading scientists, researchers, and engineers from 22 different countries from academia and industry have been selected to write chapters on the topics of their expertise. They have written 52 chapters on the fundamentals of bulk crystal growth from the melt, solution, and vapor, epitaxial growth, modeling of growth processes and defects, techniques of defect characterization as well as some contemporary special topics. This unique effort will provide readers with a fundamental understanding of crystal growth with the latest instrumentation and techniques available for crystal and thin-film fabrication. It is written and compiled for professionals and practitioners, materials scientists, physicists, and chemists at universities and in industrial research and production. Key Topics Crystal growth and characterization fundamentals Bulk crystal growth from the melt, solution, and vapor Thin-film epitaxial growth Modeling of growth processes Defect formation and morphology Crystalline material characterization and analysis Features Covers basic concepts, materials, properties, and fabrication. Contains over 1,200 color illustrations. Numerous comprehensive tables. Features exhaustive references to approved data. Fully searchable DVD-ROM for quick access to data |
| Bibliography |
Includes bibliographical references and index |
| Notes |
English |
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Print version record |
| Subject |
Crystal growth.
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SCIENCE -- Physics -- Crystallography.
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Physique.
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Crystal growth
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| Form |
Electronic book
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| Author |
Dhanaraj, Govindhan
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| ISBN |
9783540747611 |
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3540747613 |
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1282984004 |
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9781282984004 |
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9786612984006 |
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6612984007 |
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