Description |
1 online resource (xv, 445 pages) : illustrations |
Contents |
Towards III-V digital MOSFET circuits -- Physics of compound semiconductors: band-engineered heterostructures and strain effects -- Physics and modeling of compound semiconductor MOSFETs -- P-channel MOSFETs -- Compound semiconductor technology: MBE and MOCVD -- Properties and trade-offs of compound semiconductor MOSFETs -- Electronic structure and properties of high-k gate oxides -- Interface chemistry of III-V's with oxides -- Heterostructure FETs for digital circuits -- Interface passivation techniques -- Source/drain contact technologies -- MOSFETs with Ga2O3 gate oxide -- MOSFETs with ALD high-k oxides -- Narrow bandgap MOSFETs: InAs and InSb as channel materials -- GaN based MOSFETs -- Electrical measurement issues for gate stacks and FETs -- Circuits with III-V MOSFETs |
Summary |
III-V Compound Semiconductor MOSFETs presents the fundamentals and current status of research of compound semiconductor metal-oxide-semiconductor field-effect transistors (MOSFETs) that are envisioned as a future replacement of silicon in digital circuits. The material covered begins with a review of specific properties of III-V semiconductors and available technologies making them attractive to MOSFET technology, such as band-engineered heterostructures, effect of strain, nanoscale control during epitaxial growth. Due to the lack .. |
Bibliography |
Includes bibliographical references and index |
Notes |
Print version record |
In |
Springer eBooks |
Subject |
Metal oxide semiconductor field-effect transistors -- Design and construction
|
|
Electronic circuit design.
|
|
Engineering.
|
|
Engineering
|
|
engineering.
|
|
TECHNOLOGY & ENGINEERING -- Electronics -- Transistors.
|
|
Ingénierie.
|
|
Engineering
|
|
Electronic circuit design
|
|
Metal oxide semiconductor field-effect transistors -- Design and construction
|
Form |
Electronic book
|
Author |
Oktyabrsky, Serge
|
|
Ye, Peide D
|
LC no. |
2010920631 |
ISBN |
9781441915474 |
|
1441915478 |
|