| Description |
1 online resource (170 pages) : illustrations |
| Contents |
Variability in nanometer technologies and impact on SRAM -- Variation-tolerant SRAM write and read assist techniques -- Reducing SRAM power using fine-grained wordline pulse width control -- A methodology for statistical estimation of read access yield in SRAMs -- Characterization of SRAM sense amplifier input offset for yield prediction |
| Summary |
"Variability is one of the most challenging obstacles for IC design in nanometer regime. In nanometer technologies, SRAM show an increased sensitivity to process variations due to low-voltage operation requirements, which are aggravated by the strong demand for lower power consumption and cost, while achieving higher performance and density. Nanometer Variation-Tolerant SRAM: Circuits and Statistical Design for Yield is the main resource of robust SRAM circuits and statistical design methodologies for researchers and practicing engineers in the field of memory design. This book combines state of the art circuit techniques and statistical methodologies to optimize SRAM performance and yield in nanometer technologies. It is an essential reference for researches, professionals and students working on SRAM design and digital circuits in general"--Provided by publisher |
| Analysis |
Circuits and Systems |
|
Computer aided design |
|
Computer-Aided Engineering (CAD, CAE) and Design |
|
Systems engineering |
| Bibliography |
Includes bibliographical references and index |
| Notes |
English |
|
Print version record |
| Subject |
Random access memory.
|
|
COMPUTERS -- Computer Engineering.
|
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COMPUTERS -- Hardware -- General.
|
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COMPUTERS -- Machine Theory.
|
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Ingénierie.
|
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Random access memory
|
| Form |
Electronic book
|
| Author |
Anis, Mohab.
|
| ISBN |
9781461417491 |
|
146141749X |
|
