| Description |
1 online resource (1 volume) : illustrations |
| Contents |
Development of gallium arsenide devices and integrated circuits -- Gallium arsenide crystal structure and growth -- Epitaxial growth processes -- Process techniques -- Lithography -- Device-related physics and principles -- Metal-to-GaAs contacts -- GaAs metal-semiconductor field-effect transistor -- High electron-mobility transistor (HEMT) -- Heterojunction bipolar transistors -- Resonant-tunneling transistors -- Hot-electron transistors and novel devices -- GaAs FET amplifiers and monolithic microwave integrated circuits -- GaAs digital integrated circuits -- High-speed photonic devices |
| Summary |
The performance of high-speed semiconductor devices--the genius driving digital computers, advanced electronic systems for digital signal processing, telecommunication systems, and optoelectronics--is inextricably linked to the unique physical and electrical properties of gallium arsenide. Once viewed as a novel alternative to silicon, gallium arsenide has swiftly moved into the forefront of the leading high-tech industries as an irreplaceable material in component fabrication. GaAs High-Speed Devices provides a comprehensive, state-of-the-science look at the phenomenally expansive range of engineering devices gallium arsenide has made possible--as well as the fabrication methods, operating principles, device models, novel device designs, and the material properties and physics of GaAs that are so keenly integral to their success. In a clear five-part format, the book systematically examines each of these aspects of GaAs device technology, forming the first authoritative study to consider so many important aspects at once and in such detail. Beginning with chapter 2 of part one, the book discusses such basic subjects as gallium arsenide materials and crystal properties, electron energy band structures, hole and electron transport, crystal growth of GaAs from the melt and defect density analysis. Part two describes the fabrication process of gallium arsenide devices and integrated circuits, shedding light, in chapter 3, on epitaxial growth processes, molecular beam epitaxy, and metal organic chemical vapor deposition techniques. Chapter 4 provides an introduction to wafer cleaning techniques and environment control, wet etching methods and chemicals, and dry etching systems, including reactive ion etching, focused ion beam, and laser assisted methods. Chapter 5 provides a clear overview of photolithography and nonoptical lithography techniques that include electron beam, x-ray, and ion beam lithography systems. The advances in fabrication techniques described in previous chapters necessitate an examination of low-dimension device physics, which is carried on in detail in chapter 6 of part three. Part four includes a discussion of innovative device design and operating principles which deepens and elaborates the ideas introduced in chapter 1. Key areas such as metal-semiconductor contact systems, Schottky Barrier and ohmic contact formation and reliability studies are examined in chapter 7. A detailed discussion of metal semiconductor field-effect .. |
| Analysis |
Semiconductors |
| Bibliography |
Includes bibliographical references and index |
| Notes |
Master and use copy. Digital master created according to Benchmark for Faithful Digital Reproductions of Monographs and Serials, Version 1. Digital Library Federation, December 2002. http://purl.oclc.org/DLF/benchrepro0212 MiAaHDL |
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Copyright © Wiley-Interscience 1994 |
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English |
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Print version record |
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digitized 2010 HathiTrust Digital Library committed to preserve pda MiAaHDL |
| Subject |
Gallium arsenide semiconductors.
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Integrated circuits.
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Gallium arsenide.
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Gallium arsenide
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Gallium arsenide semiconductors
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Integrated circuits
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Electrical & Computer Engineering.
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Engineering & Applied Sciences.
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Electrical Engineering.
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| Form |
Electronic book
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| Author |
Kai, Francis, 1956-
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| LC no. |
92020705 |
| ISBN |
047185641X |
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9780471856412 |
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