| Description |
1 online resource (189 p.) |
| Contents |
Intro -- Group III -Nitride Semiconductor Optoelectronics -- Preface -- Contents -- 1 Introduction -- 2 Band Structure and Optical Properties of Group III-Nitride Semiconductors -- Crystal Symmetry (Wurtzite and Cubic Phases) -- Lattice Periodicity and Crystal Hamiltonian -- Bloch's Theorem and Nature of Electron States -- Quantum Mechanical Properties Corresponding to Bloch States -- Light-Matter Interaction in Semiconductors -- Spontaneous and Piezoelectric Polarization -- Phonon Spectrum -- Scattering Mechanisms -- Donors and Deep Acceptors |
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3 Growth and Doping of Group III-Nitride Devices -- Major Epitaxial Growth Methods -- In Situ and Implant Doping -- Dislocations and Point Defects -- Dopant-induced Defects -- Substrates and Growth -- Gallium Nitride Growth on Silicon Substrates -- 4 Optical Properties of Low-dimensional Structures in Group III Nitrides -- Quantum Wells, Quantum Wires, and Quantum Dots -- The k.p Method -- Crystal Symmetry and Low-dimensional Structures -- Alloy Disorder and Density Functional Theory Electronic Structure Calculation -- Deviations from Charge Neutrality and Effect on Electronic Structure |
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Polarization Engineering Using Quaternaries and Complex Structures -- Dislocations in Low-dimensional Structures and Carrier Dynamics -- Disorder, Carrier Localization, and Effect on Recombination and Red Shifts -- 5 Light-emitting Diodes and Lasers -- Blue, Green, and Ultraviolet (UV) LEDs -- Light-emitting Diode Basic Operating Principles -- Blue, Green, and UV Lasers -- Blue, Green, and Device Laser Materials -- Device Considerations -- Nanowire microLEDs -- LED Quantum Efficiencies and Laser Threshold Currents in Quantum Wires and Quantum Dots |
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Auger Recombination and Efficiency Droop in Group III-Nitride LEDs -- Dislocations in Low-dimensional Structures and Carrier Dynamics -- Disorder, Carrier Localization, and Effect on Recombination and Red Shifts -- Staggered Quantum-well InGaN Laser Characteristics -- Non-polar Plane Quantum-well InGaN LEDs and Lasers -- Semi-polar Plane Quantum-well InGaN LEDs and Lasers -- p-Type Ohmic Contacts and Efficiency of LEDs and Lasers -- Vertical Cavity Surface Emitting Lasers -- Distributed Feedback Lasers -- Plasmonic Nanolasers -- Indium Gallium Nitride LEDs and Lasers on Si Substrates |
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6 Inter Sub-band Devices -- Quantum Cascade Lasers -- Infrared Photodetectors -- 7 Photodetectors -- Ultraviolet Photodetectors -- Complex Dielectric Function -- Basic Principle of Operation -- Metal-Semiconductor-Metal (MSM) Photodetector -- Solar-blind Group III-Nitride UV Photodetectors -- p-i-n Photodiodes -- Schottky Barrier Photodiodes -- Heterogenous Photodiodes with Group III Nitrides and Transition Metal Dichalcogenides -- Alloy Nitrides and Spectral Response -- Photodetectors and Substrate Engineering -- 8 Photovoltaics and Energy Conversion Devices |
| Notes |
Description based upon print version of record |
|
Indium Gallium Nitride Material System for Solar Cells |
| Form |
Electronic book
|
| ISBN |
9781119708629 |
|
1119708621 |
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