Cover -- Half Title -- Title Page -- Copyright Page -- GaAs Symposium Award and Heinrich Welker Gold Medal -- Young Scientist Award -- Preface -- Acknowledgments -- Table of Contents -- Chapter 1: Plenary Papers -- New Directions for III-V Structures: Metal/Semiconductor Heteroepitaxy -- Short Wavelength II-VI Laser Diodes -- Two-Dimensional Electron Optics in GaAs -- Chapter 2: Epitaxy, Mainly Molecular Beam -- Facet Formation Observed in MOMBE of GaAs on a Patterned Substrate -- Atomically Flat AlGaAs/GaAs (110) Heterointerface Grown by Molecular Beam Epitaxy
Abrupt Hetero Junctions of AlGaAs/GaAs Quantum Wells Grown on (111)A GaAs Substrates by Molecular Beam Epitaxy -- Confinement of Excess Arsenic Incorporated in Thin Layers of MBE-Grown Low-Temperature GaAs -- Etching of GaAs and AlGaAs by H* Radical Produced with a Tungsten Filament -- Reduction in the Outdiffusion into Epitaxial Ge Grown on GaAs Using a Thin Alas Interlayer -- Improvement of the Electrical Properties of MBE Grown Ge Layers and Its Application to Collector-top n-GaAs/p-Ge/n-Ge HBTS -- Defects in Vertical Zone Melt (VZM) GaAs
Constant Temperature Growth of Uniform-Composition InxGa1-xAs Bulk crystals by Supplying GaAs -- InxAI1-xAs/InP: Organometallic Molecular Beam Epitaxial Growth and Optical Properties -- Strained Quantum Well InGaSb/AIGaSb Heterostructures Grown Bymolecular Beam Epitaxy -- Growth and Characterization of InAs1-xSbx Layers on Gasb Substrates -- An Investigation of the Structural and Insulating Properties of Cubic GaN for GaAs-GaN Semiconductor-Insulator Devices -- Transmission Electron Microscopy Study of Intermetallic Compound Fe3AIxSi1-x Epitaxially Grown on GaAs
Magneto-Optic and Schottky Barrier Properties of MnAI/Alas/GaAs Heterostructures -- MBE Growth Optimization and Thermal Stability of Strained In0.25Ga0.75As Layers in MODFET Layer Structures -- Thermal Annealing Effects on the Defect and Stress Reduction in Undercut GaAs on Si -- Chapter 3: MESFETs and MODFETs -- Extensive Study on the Effect of Undoped GaAs Layers on MESFET Channels and Its Application for Ku-Band Extra High Output Power Devices -- Characterization of Anomalous Frequency Dispersion in GaAs BP-MESFETs by Direct Large-Signal I-V Measurement
High Quality and Very Thin Active Layer Formation for Ion Implanted GaAs MESFETs -- Novel Carbon-Doped P-Channel GaAs MESFET Grown by MOMBE -- Pseudomorphic GaAs/GalnAs Pulse-Doped MESFETs Grown by Organometallic Vapor Phase Epitaxy -- Two-Dimensional Electron Gas Analysis on Pseudomorphic Heterojunction Field-Effect Transistor Structures by Photoluminescence -- Investigation of Pseudomorphic InGaAs HEMT Interfaces -- Investigation of Transport Phenomena in Pseudomorphic MODFETs -- Influence of the Doping Position on the Performance of High Speed AlGaAs/InGaAs HFETS with Doped Channels
Notes
Description based upon print version of record
A P-Channel Gasb Heterojunction Field-Effect Transistor Based on a Vertically Integrated Complementary Circuit Structure
