Limit search to available items
Book Cover

Title Ferroelectricity in doped hafnium oxide : materials properties and devices / edited by Uwe Schroeder, Cheol Seong Hwang, Hiroshi Funakubo
Edition First edition
Published Duxford : Woodhead Publishing, [2019]


Description 1 online resource : illustrations
Series Woodhead Publishing series in electronic and optical materials
Woodhead Publishing series in electronic and optical materials.
Summary Ferroelectricity in Doped Hafnium Oxide: Materials, Properties and Devices covers all aspects relating to the structural and electrical properties of HfO2 and its implementation into semiconductor devices, including a comparison to standard ferroelectric materials. The ferroelectric and field-induced ferroelectric properties of HfO2-based films are considered promising for various applications, including non-volatile memories, negative capacitance field-effect-transistors, energy storage, harvesting, and solid-state cooling. Fundamentals of ferroelectric and piezoelectric properties, HfO2 processes, and the impact of dopants on ferroelectric properties are also extensively discussed in the book, along with phase transition, switching kinetics, epitaxial growth, thickness scaling, and more. Additional chapters consider the modeling of ferroelectric phase transformation, structural characterization, and the differences and similarities between HFO2 and standard ferroelectric materials. Finally, HfO2 based devices are summarized
Notes Includes index
Bibliography Includes bibliographical references and index
Notes Print version record
Subject Metal oxide semiconductors.
Hafnium oxide.
Hafnium oxide -- Electric properties
Hafnium oxide
Metal oxide semiconductors
Form Electronic book
Author Schroeder, Uwe, editor
Hwang, Cheol Seong, editor.
Funakubo, Hiroshi, editor
ISBN 9780081024317