| Description |
1 online resource (222 pages) |
| Contents |
Intro -- Contents -- Micromachined Resonant Electrometers -- 1 Introduction -- 2 Vibration System -- 2.1 Resonance -- 2.2 Oscillation -- 3 Charge Measurement Paradigms -- 3.1 Axial Strain Modulation -- 3.2 Lateral Stiffness Perturbation -- 3.3 Prototype Instantiation -- 4 Conclusions -- References -- Micro-electrometer Based on Mode-Localization Effect -- 1 Introduction -- 2 Theory of Mode-Localized Sensors -- 2.1 Operation of 2DoF Mode-Localized Sensors -- 2.2 Common Mode Rejection Capabilities -- 2.3 Operation of mDoF Mode-Localized Sensors |
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3 Design Considerations for Mode-Localized Electrometers -- 3.1 Device Designs of Mode-Localized Electrometers -- 3.2 Electronics Implementation of Mode-Localized Electrometers -- 3.3 Sensor Output Metrics -- 3.4 Sensor Noise Floor -- 3.5 Sensor Bias Instability -- 4 Further Methods to Improve the Sensor -- 4.1 Utilizing Nonlinearities to Improve Resolution -- 4.2 Employing Alternative Coupling Methods -- 5 Conclusions -- References -- Radio-Frequency Capacitive Gate-Based Charge Sensing for Semiconductor Quantum Dots -- 1 Introduction -- 2 Charge Transport and Dynamics in a Single QD System |
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2.1 Electron Transport Through a Single QD -- 2.2 The Origin of Capacitance in a Single QD-reservoir System -- 3 Charge Transport and Dynamics in Double QD -- 3.1 Charge Stability Diagram for DQD System -- 3.2 The Origin of Capacitance in DQD System -- 3.3 Parametric Capacitance in Charge Qubit Configuration -- 4 Capacitive Gate-Based Sensing: Theory -- 4.1 High Frequency Resonator Construction -- 4.2 High Frequency Resonator Characterization -- 4.3 Resonator Optimization for Reflectometry -- 5 How to Achieve Sensitive Gate-Based Sensing -- 5.1 Implementing Large Gate Coupling |
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5.2 Resonator with Large Q0 and Small Parasitic Capacitance -- 5.3 Operating Close to Perfect Matching -- 6 Cryogenic RF Reflectometry Setup -- 7 Capacitive Gate-Based Sensing: Experiment -- 7.1 Dispersive Regime -- 7.2 Charge Sensitivity Measurement -- 7.3 Gate Sensor Optimization -- 7.4 Gate Sensor in Magnetic Field -- 7.5 Noise Limit of the Gate Sensor -- 7.6 High Frequency Operation -- 8 Conclusion -- References -- Micro Electrometers Based on Micromachined Time-Modulated Variable Capacitors -- 1 Device Concept -- 2 Actuator Design -- 2.1 Parallel Plate -- 2.2 Comb Drive |
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2.3 Differential Comb Drive -- 3 Charge Feedthrough from Actuator Drive -- 4 Second Harmonic Detection -- 5 Effect of Parasitics on Sensitivity -- 6 Fabrication Process Considerations -- 6.1 SOI Top Side Release -- 6.2 SOI Bottom Side Release -- 7 Design of Interface Electronics -- 7.1 Junction Field Effect Transistor Buffer -- 7.2 Trans-Capacitance Amplifier -- 7.3 MEMS and Readout Electronics Integration -- 8 Temperature Sensitivity -- References -- Micromachined Vibrating-Reed Electrometer in Silicon-on-Glass Technology -- 1 Introduction -- 2 MEMS Vibrating-Reed Electrometry |
| Summary |
This book reviews advances in cutting-edge micro-/nano-electrometers, and discusses the technological challenges involved in their practical implementation. The detection of electrostatic charge has a wide range of applications in ionization chambers, bio-analyte and aerosol particle instruments, mass spectrometers, scanning tunneling microscopes, and even quantum computers. Designing micro-/nano-electrometers (also known as charge sensors) for electrometry is considered vital because of the charge sensitivity and resolution issues at micro-/nano-scales. The remarkably dynamic microelectromechanical systems (MEMSs)/nanoelectromechanical systems (NEMSs), and advances in solid-state electronics, hold considerable potential for the design and fabrication of extremely sensitive charge sensors |
| Notes |
3 Silicon-on-Glass Technology |
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Print version record |
| Subject |
Electrometer.
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electrometers.
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Electrometer
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| Form |
Electronic book
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| Author |
Zhu, Yong
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| ISBN |
9811332479 |
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9789811332470 |
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