| Description |
1 online resource (xiv, 1284 pages) : illustrations |
| Contents |
1. Basic Properties and Device Physics of III-V Materials -- 2. Two-Terminal Heterojunction Devices -- 3. D.C. Current Gain -- 4. Nonideal D.C. Characteristics -- 5. Thermal-Electrical Properties -- 6. Collapse of Current Gain -- 7. Failure Mechanisms and Reliability Issues -- 8. Small-Signal Properties -- 9. Epitaxial Layer Design -- 10. Geometrical Layout Design -- 11. Power Amplifier -- 12. Distortion and Noise -- 13. Switching Characteristics and Spice Models -- 14. Transistor Fabrication -- 15. Measured Transistor Performances -- App. A. Analytical Forms of the Base Current Components -- App. B. y-Parameters for HBTs with a Base Electric Field -- App. C. Forward and Reverse Charge Calculation for Transistor in Saturation -- App. D. Parametric Analyzer Measurement Setup Menus -- App. E. Frequency Band Designation -- App. F. Universal Constants and Units -- App. G. Metal Resistivities -- App. H. Semiconductor Material Parameters at Room Temperature -- App. I. Heterojunction Parameters at Room Temperature -- App. J. Basic Device Equations |
| Summary |
The definitive hands-on guide to heterojunction bipolar transistors In recent years, heterojunction bipolar transistor (HBT) technology has become an intensely researched area in universities and industry worldwide. Boasting superior performance over silicon bipolar transistors with its combined high speed, high linearity, and high power requirements, the III-V HBT is fast becoming a major player in wireless communication, power amplifiers, mixers, and frequency synthesizers. Handbook of III-V Heterojunction Bipolar Transistors presents a comprehensive, systematic reference for this cutting-edge technology. In one self-contained volume, it covers virtually every HBT topic imaginable--introductory and advanced, theoretical and practical--from device physics, to design issues, to HBT performance in digital and analog circuits. It features: A user-friendly, integrated approach to HBTs and circuit design that can be applied in diverse disciplines A discussion of factors determining transistor operation, including thermal properties, failure mechanisms, high-frequency measurements and models, switching characteristics, noise and distortion, and modern device fabrications Over 800 illustrations, showing how to use concepts and equations in the real world An introduction to device physics and semiconductor basics Many worked-out examples and end-of-chapter problem sets Fully developed mathematical derivations Handbook of III-V Heterojunction Bipolar Transistors is an important reference for practicing engineers and researchers in cellular wireless communication and microwave-millimeter electronics as well as for wireless circuit design engineers. It is also extremely useful for advanced undergraduate and graduate students studying advanced semiconductor and microwave circuits |
| Bibliography |
Includes bibliographical references and index |
| Notes |
Master and use copy. Digital master created according to Benchmark for Faithful Digital Reproductions of Monographs and Serials, Version 1. Digital Library Federation, December 2002. http://purl.oclc.org/DLF/benchrepro0212 MiAaHDL |
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English |
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digitized 2010 HathiTrust Digital Library committed to preserve pda MiAaHDL |
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Print version record |
| Subject |
Bipolar transistors.
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Field-effect transistors.
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Bipolar transistors
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Field-effect transistors
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Heterobipolartransistor
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BIPOLAR TRANSISTORS.
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FIELD EFFECT TRANSISTORS.
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TRANSISTORS.
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HANDBOOKS.
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| Form |
Electronic book
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