Title Characterisation and control of defects in semiconductors / edited by Filip Tuomisto

Published Stevenage : The Institution of Engineering and Technology, 2019 ©2019

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Description 1 online resource (596 pages) Series IET Materials, Circuits & Devices Series ; 45 Materials, circuits and devices series ; 45. Summary The following topics are dealt with: semiconductor defect control; semiconductor doping; ion beam effects; ion implantation; elemental semiconductors; silicon; electrically active defects; point defect luminescence; vibrational spectroscopy; magnetic resonance methods; muons; positron annihilation spectroscopy; first principles methods; microscopy; 3D atomic-scale studies; ion beam modification; and ion beam analysis and channelling Analysis semiconductor defects electrically active defects point defect luminescence vibrational spectroscopy magnetic resonance methods muons positron annihilation spectroscopy first principles methods microscopy 3D atomic-scale studies ion beam modification ion beam analysis channelling silicon elemental semiconductors ion implantation ion beam effects semiconductor doping Bibliography Includes bibliographical references and index Notes Online resource; title from PDF title page (IET Digital, viewed January 13, 2020) Subject Ion implantation. Magnetic resonance. Semiconductor doping. Semiconductors -- Materials Silicon. Silicon silicon. Ion implantation. Magnetic resonance. Semiconductor doping. Semiconductors -- Materials. Silicon. crystal defects. ion beam effects. ion implantation. luminescence. magnetic resonance. microscopy. positron annihilation. semiconductor doping. semiconductor materials. silicon. Form Electronic book Author Tuomisto, Filip, editor ISBN 1785616560 9781785616563

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