Title Gallium nitride processing for electronics, sensors and spintronics / Stephen J. Pearton, Cammy R. Abernathy and Fan Ren

Published London : Springer, ©2006

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Description 1 online resource (xii, 374 pages) : illustrations Series Engineering materials and processes Engineering materials and processes. Contents Cover -- Contents -- Preface -- 1 Advanced Processing of Gallium Nitride for Electronic Devices -- 1.1 Abstract -- 1.2 Introduction -- 1.3 Results and Discussion -- 1.3.1 Ultra-High-Temperature Activation of Implant Doping in Gallium Nitride -- 1.4 Implant Isolation -- 1.4.1 Oxygen Implantation for Selective Area Isolation -- 1.4.2 Creation of High-Resistivity Gallium Nitride by Ti, Iron, and Chromium Implantation -- 1.5 Electrical Contacts to Gallium Nitride -- 1.5.1 Effects of Interfacial Oxides on Schottky Contact -- 1.5.2 Interfacial Insulator Model -- 1.5.3 Thermally Stable Tungsten-Based Ohmic Contact -- 1.5.4 Behavior of Tungsten and Tungsten Silicide Contacts on p-Gallium Nitride -- 1.6 Dry Etch Damage in Gallium Nitride -- 1.6.1 Plasma Damage in n-Gallium Nitride -- 1.6.2 Effect of Etching Chemistries on Damage -- 1.6.3 Thermal Stability of Damage -- 1.6.4 Plasma Damage in p-Gallium Nitride -- 1.6.5 Thermal Stability of Damage -- 1.6.6 Determination of Damage Profile in Gallium Nitride -- 1.7 Conclusions and Future Trends -- References -- 2 Dry Etching of Gallium Nitride and Related Materials -- 2.1 Abstract -- 2.2 Introduction -- 2.3 Plasma Reactors -- 2.3.1 Reactive Ion Etching -- 2.3.2 High-Density Plasmas -- 2.3.3 Chemically Assisted Ion Beam Etching -- 2.3.4 Reactive Ion Beam Etching -- 2.3.5 Low-Energy Electron Enhanced Etching -- 2.4 Plasma Chemistries -- 2.4.1 Chlorine-Based Plasmas -- 2.4.2 Iodine- and Bromine-Based Plasmas -- 2.4.3 Methane-Hydrogen-Argon Plasmas -- 2.5 Etch Profile and Etched Surface Morphology -- 2.6 Plasma-Induced Damage -- 2.6.1 n-Gallium Nitride -- 2.6.2 p-Gallium Nitride -- 2.6.3 Schottky Diodes -- 2.6.4 p-n Junctions -- 2.7 Device Processing -- 2.7.1 Microdisk Lasers -- 2.7.2 Ridge Waveguide Lasers -- 2.7.3 Heterojunction Bipolar Transistors -- 2.7.4 Field Effect Transistors -- 2.7.5 Ultroviolet Detectors -- References -- 3 Design and Fabrication of Gallium Nitride High-Power Rectifiers -- 3.1 Abstract -- 3.2 Introduction -- 3.3 Background -- 3.3.1 Temperature Dependence of Bandgap -- 3.3.2 Effective Density of States -- 3.3.3 Intrinsic Carrier Concentration -- 3.3.4 Incomplete Ionization of Impurity Atoms -- 3.3.5 Mobility Models -- 3.3.6 Generation and Recombination -- 3.3.7 Reverse Breakdown Voltage -- 3.3.8 On-State Resistance -- 3.4 Edge Termination Design -- 3.4.1 Field Plate Termination -- 3.4.2 Junction Termination -- 3.5 Comparison of Schottky and p-n Junction Diodes -- 3.5.1 Reverse Bias -- 3.5.2 Forward Bias -- 3.6 High Breakdown Lateral Diodes -- 3.7 Bulk Diode Arrays -- 3.8 Conclusions -- References Summary "Gallium Nitride Processing for Electronics, Sensors and Spintronics details current research into the properties of III-nitride semiconductors and their usefulness in novel devices such as spin-polarized light emitters, spin field effect transistors, integrated sensors and high temperature electronics." "Written by three of the world's leading researches in nitride semiconductors, the book provides an introduction to gallium nitride technology and will be of interest to all researches and industrial practitioners wishing to keep up to date with development that may lead to the next generation of transistors, lasers and integrated magnetic sensors."--Jacket Analysis chemie chemistry condenseren condensation elektronica electronics instrumentatie instrumentation optische instrumenten optical instruments nanotechnologie nanotechnology optica optics Chemistry (General) Chemie (algemeen) Bibliography Includes bibliographical references and index Notes Master and use copy. Digital master created according to Benchmark for Faithful Digital Reproductions of Monographs and Serials, Version 1. Digital Library Federation, December 2002. http://purl.oclc.org/DLF/benchrepro0212 MiAaHDL English Print version record digitized 2010 HathiTrust Digital Library committed to preserve pda MiAaHDL In Springer e-books Subject Semiconductors. Gallium nitride. Detectors -- Technological innovations Semiconductors semiconductor. TECHNOLOGY & ENGINEERING -- Electronics -- Solid State. TECHNOLOGY & ENGINEERING -- Electronics -- Semiconductors. Gallium nitride. Detectors -- Technological innovations. Semiconductors. Chimie. Science des matériaux. Detectors -- Technological innovations Gallium nitride Semiconductors Traitements de surface. Électronique -- Matériaux. Nitrure de gallium. Form Electronic book Author Abernathy, C. R. Ren, F. ISBN 9781846283598 1846283590 1852339357 9781852339357 9786610625451 661062545X 1280625457 9781280625459

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