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Author International Conference on Rapid Thermal Processing for Future Semiconductor Devices (2nd : 2001 : Ise-Shima, Mie, Japan)

Title Rapid thermal processing for future semiconductor devices : proceedings of the 2001 International Conference on Rapid Thermal Processing for Future Semiconductor Devices (RTP 2001), held at Ise-Shima, Mie, Japan, November 14-16, 2001 / edited by Hisashi Fukuda
Published Amsterdam ; London : Elsevier, 2003


Description 1 online resource (x, 150 pages) : illustrations
Contents Cover -- Copyright Page -- CONTENTS -- Preface -- RTP2001 Organization -- Chapter 1. Role of Rapid Thermal Processing in the Development of Disruptive and Non-disruptive Technologies for Semiconductor Manufacturing in the 21st Century -- Chapter 2. Analytical Model for Spike Annealed Diffusion Profiles of Low-Energy and High-Dose Ion Implanted Impurities -- Chapter 3. Process and Technology Drivers for Single Wafer Processes in DRAM Manufacturing -- Chapter 4. Ultra-high vacuum rapid thermal chemical vapor deposition for formation of TiN as barrier metals -- Chapter 5. Implementations of Rapid Thermal Processes in Polysilicon TFT Fabrication -- Chapter 6. High-Performance Poly-Si TFT and its Application to LCD -- Chapter 7. Rapid Low Temperature Photo Oxidation Processing for Advanced Poly-Si TFTs -- Chapter 8. Properties of Phosphorus-Doped Polycrystalline Silicon Films Formed by Catalytic Chemical Vapor Deposition and Successive Rapid Thermal Annealing -- Chapter 9. Evaluation of Crystalline Defects in Thin, Strained Silicon-Germanium Epitaxial Layers by Optical Shallow Defect Analyzer -- Chapter 10. Novel UV-assisted Rapid Thermal Annealing of Ferroelectric Materials -- Chapter 11. Rapid Thermal Annealing of (l-x)Ta2O5-xTiO2 Thin Films Formed by Metalorganic Decomposition -- Chapter 12. Hard Breakdown Characteristics in a 2.2-nm-thick SiO2 film -- Chapter 13. Rapid Thermal MOCVD Processing for InP-Based Devices -- Chapter 14. Sb Pile-up at the SiO2/Si Interface during Drive-in Process after Predeposition using SOG Source -- Chapter 15. Large Refractive Index C-S-Au Composite Film Formation by Plasma Processes -- Chapter 16. The LEVITOR 4000 system, Ultra-fast, Emissivity-independent, heating of substrates via heat conduction through thin gas layers -- Chapter 17. Steady and Transient Gas Flow Simulation of SiGe Vertical Reactor -- Chapter 18. The Short-period (Si14/Ge1)20 and (Si28/Ge2)10 superlattices as Buffer Layers for the Growth of Si0.75Ge0.25 Alloy Layers -- Chapter 19. Si Epitaxial Growth on the Atomic-Order Nitrided Si(l00) Surface in SiH4 Reaction -- Chapter 20. Heavy Doping Characteristics of Si Films Epitaxially Grown at 450oC by Alternately Supplied PH3 and SiH4 -- Last Page
Summary This volume is a collection of papers which were presented at the 2001 International Conference on Rapid Thermal Processing (RTP 2001) held at Ise Shima, Mie, on November 14-16, 2001. This symposium is second conference followed the previous successful first International RTP conference held at Hokkaido in 1997. The RTP 2001 covered the latest developments in RTP and other short-time processing continuously aiming to point out the future direction in the Silicon ULSI devices and II-VI, III-V compound semiconductor devices. This book covers the following areas: advanced MOS gate stack, integration technologies, advancd channel engineering including shallow junction, SiGe, hetero-structure, novel metallization, inter-connect, silicidation, low-k materials, thin dielectrics including gate dielectrics and high-k materials, thin film deposition including SiGe, SOI and SiC, process and device modelling, Laser-assisted crystallization and TFT device fabrication technologies, temperature monitoring and slip-free technologies
Bibliography Includes bibliographical references
Notes Print version record
Subject Semiconductors -- Heat treatment -- Congresses
Rapid thermal processing -- Congresses
TECHNOLOGY & ENGINEERING -- Electronics -- Solid State.
TECHNOLOGY & ENGINEERING -- Electronics -- Semiconductors.
Rapid thermal processing.
Semiconductors -- Heat treatment.
Genre/Form Conference papers and proceedings.
Conference papers and proceedings.
Form Electronic book
Author Fukuda, Hisashi.
ISBN 9780444513397