| Description |
1 online resource (386 pages) |
| Series |
ISTE |
|
ISTE
|
| Contents |
Title Page; Cpntents; Preface; Chapter 1. Chemistry in the "Front End of the Line" (FEOL): Deposits, Gate Stacks, Epitaxy and Contacts; 1.1. Introduction; 1.2. Arrangement of the gate; 1.2.1. Generalities; 1.2.2. Silicon nitriding processes; 1.2.3. The introduction of the High K/metal gate stacks; 1.2.4. Conclusion; 1.3. Chemistry of crystalline materials; 1.3.1. Generalities; 1.3.2. A few basic ideas about epitaxy; 1.3.3. Surface preparation prior to epitaxy; 1.3.4. Low-temperature Si and SiGe growth: the comparison of three precursors (silane, disilane and dichlorosilane) |
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1.3.5. Integration and conclusion1.4. Contact areas between the gate and the "source" and "drain"; 1.4.1. Generalities; 1.4.2. Introduction to the conventional NiSi process for sub-90 nm nodes; 1.4.3. Implications for the SALICIDE process of the recent technology evolutions; 1.4.4. Conclusion; 1.5. General conclusion; 1.6. List of Abbreviations; 1.7. Bibliography; Chapter 2. Chemistry in Interconnects; 2.1. Introduction; 2.2. Interconnects: generalities and background; 2.2.1. What conditions are required for an interconnect?; 2.2.2. The main technological advancements; 2.2.3. Conclusion |
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2.3. Dielectric deposits2.3.1. Dielectric generalities; 2.3.2. Interline dielectrics; 2.3.3. Barrier dielectrics; 2.3.4. Conclusion; 2.4. Deposition and properties of metal layers for interconnect structures; 2.4.1. The manufacture of interconnect structures; 2.4.2. The chemistry of materials and functional properties; 2.4.3. The chemistry of interfaces; 2.4.4. The chemistry of metal deposition processes; 2.4.5. Conclusion; 2.5. Cleaning process for copper interconnects; 2.5.1. Introduction; 2.5.2. Impact of corrosion in microelectronics; 2.5.3. Electrochemical diagnostic tools |
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2.5.4. Equipment for cleaning copper interconnections2.6. General conclusions and perspectives; 2.7. List of Abbreviations; 2.8. Bibliography; Chapter 3. The Chemistry of Wet Surface Preparation: Cleaning, Etching and Drying; 3.1. Introduction; 3.2. Cleaning; 3.2.1. Ammonium hydrogen peroxide mixture (APM); 3.2.2. Hydrochloric acid hydrogen peroxide mixture (HPM); 3.2.3. Sulfuric acid hydrogen peroxide mixture (SPM); 3.3. Wet etching; 3.3.1. Hydrofluoric acid (HF); 3.3.2. Buffered oxide etchant or BOE (HF/NH4F); 3.4. Rinsing and drying; 3.4.1. Ultrapure water (UPW); 3.4.2. Drying |
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3.5. Conclusion3.6. List of Abbreviations; 3.7. Bibliography; Chapter 4. The Use and Management of Chemical Fluids in Microelectronics; 4.1. Ultrapure water; 4.1.1. Parameters of UPW; 4.1.2. UPW system unit operations; 4.1.3. Fundamentals; 4.1.4. Future trends; 4.2. Gases for semiconductors; 4.2.1. Main gases used in the semiconductor fabrication process; 4.2.2. Gas quality requirements for semiconductor fabrication; 4.2.3. Implementation of gases used in the manufacturing of semiconductors; 4.2.4. Conclusion; 4.3. Dissolved gases; 4.3.1. DI-O3; 4.3.2. DI-CO2; 4.3.3. DO |
| Summary |
This book is about the chemistry involved in the semiconductor industry, comprising five chapters detailing topics relevant to chip manufacturing, from fundamentals to applications |
| Notes |
4.4. High-purity chemicals |
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Print version record |
| Subject |
Microelectronics.
|
|
microelectronics.
|
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TECHNOLOGY & ENGINEERING -- Electronics -- Digital.
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TECHNOLOGY & ENGINEERING -- Electronics -- Microelectronics.
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Microelectronics
|
| Form |
Electronic book
|
| ISBN |
9781118580141 |
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1118580141 |
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