| Description |
1 online resource (xvi, 568 pages) |
| Contents |
1 Introduction -- 2 Silicon Thyristors -- 3 Silicon Carbide Thyristors -- 4 Silicon GTO -- 5 Silicon IGBT -- 6 SiC Planar MOSFET Structures -- 7 Silicon Carbide IGBT -- 8 Silicon MCT -- 9 Silicon BRT -- 10 Silicon EST -- 11 Synopsis |
| Summary |
Annotation The devices described in Advanced MOS-Gated Thyristor Concepts are utilized in microelectronics production equipment, in power transmission equipment, and for very high power motor control in electric trains, steel-mills, etc. Advanced concepts that enable improving the performance of power thyristors are discussed here, along with devices with blocking voltage capabilities of 5,000-V, 10,000-V and 15,000-V. Throughout the book, analytical models are generated to allow a simple analysis of the structures and to obtain insight into the underlying physics. The results of two-dimensional simulations are provided to corroborate the analytical models and give greater insight into the device operation |
| Analysis |
Electronics |
|
Systems engineering |
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Production of electric energy or power |
|
Power Electronics, Electrical Machines and Networks |
|
Circuits and Systems |
|
Electronics and Microelectronics, Instrumentation |
|
Solid State Physics |
| Bibliography |
Includes bibliographical references and index |
| Subject |
Silicon-controlled rectifiers.
|
|
Solid state electronics.
|
|
Power semiconductors.
|
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TECHNOLOGY & ENGINEERING -- Mechanical.
|
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Ingénierie.
|
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Power semiconductors
|
|
Silicon-controlled rectifiers
|
|
Solid state electronics
|
| Form |
Electronic book
|
| ISBN |
9781461402695 |
|
1461402697 |
|
1461402689 |
|
9781461402688 |
|
