| Description |
1 online resource (xii, 122 pages) : illustrations |
| Series |
SPIE field guides ; FG06 |
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SPIE field guides ; FG06
|
| Contents |
Symbol glossary -- The lithography process -- Definition : semiconductor lithography -- Overview of the lithography Process -- Processing : substrate preparation -- Processing : photoresist spin coating -- Processing : post-apply bake -- Processing : alignment and exposure -- Processing : post-exposure bake -- Processing : development -- Processing : pattern transfer -- Image formation -- Maxwell's equations : the mathematics of light -- The plane wave and the phasor -- Basic imaging theory -- Diffraction -- Fraunhofer diffraction : examples -- The numerical aperture -- Fourier optics -- Spatial coherence and oblique illumination -- Partial coherence -- Aberrations -- Aberrations : the Zernike polynomial -- Aberrations : Zernike examples -- Chromatic aberration -- Horizontal-vertical (H-V) bias -- Defocus -- Flare -- Vector nature of light -- Polarization -- The optical invariant -- Immersion lithography : resolution -- Immersion lithography : depth of focus -- Imaging into a photoresist -- Standing waves: definition -- Standing waves: mathematics -- Fresnel reflectivity -- Swing curves -- Top antireflective coatings (TARC) -- Bottom antireflective coatings (BARC) -- Photoresist chemistry -- Novolak/DNQ resists -- Chemically amplified resists -- Absorption of light -- Photoresist bleaching and the Dill parameters -- Exposure kinetics -- Measuring the Dill ABC parameters -- Chemically amplified resist kinetics |
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Diffusion in chemically amplified resists -- Acid loss mechanisms -- Post-apply bake effects -- Photoresist development kinetics -- Surface inhibition -- Developer temperature and concentration -- The development path -- Lithography control and optimization -- NILS : the normalized image log-slope -- NILS : the log-slope defocus curve -- NILS : image optimization -- NILS : exposure optimization -- NILS : PEB optimization -- NILS : development optimization -- NILS : total Process optimization -- Defining photoresist linewidth -- Critical dimension control -- Critical dimension control : effect on devices -- Overlay control -- Line edge roughness -- Metrology : critical dimension -- Metrology : overlay -- The process window -- Depth of focus -- Resolution -- Rayleigh criteria : resolution -- Rayleigh criteria : depth of focus -- Mask error enhancement factor (MEEF) -- Resolution enhancement technologies -- Phase-shift masks -- Phase-shift masks : alternating -- Phase-shift masks : attenuated -- Optical proximity effects -- Optical proximity correction (OPC) -- Off-axis illumination -- Lithography simulation -- Moore's law -- Next-generation lithography (NGL) -- Equation summary -- Glossary -- Index |
| Summary |
The material in this Field Guide is a distillation of material put together by Chris Mack over the past 20 years, including notes from his graduate-level lithography course at the University of Texas at Austin. This Field Guide details the lithography process, image formation, imaging onto a photoresist, photoresist chemistry, and lithography control and optimization. An introduction to next-generation lithographic technologies is also included, as well as an extensive lithography glossary and a summation of salient equations critical to anyone involved in the lithography industry |
| Notes |
"SPIE digital library." |
| Bibliography |
Includes bibliographical references and index |
| Notes |
English |
| Subject |
Integrated circuits -- Design and construction.
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Microlithography.
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TECHNOLOGY & ENGINEERING -- Mechanical.
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Integrated circuits -- Design and construction
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Microlithography
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| Form |
Electronic book
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| Author |
Society of Photo-Optical Instrumentation Engineers
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| ISBN |
9780819478214 |
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0819478210 |
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